Datasheet Details
- Part number
- TP65H050G4YS
- Manufacturer
- Renesas ↗
- File Size
- 1.03 MB
- Datasheet
- TP65H050G4YS-Renesas.pdf
- Description
- 650V FET
TP65H050G4YS Description
Specifications in this document are tentative and subject to change Datasheet TP65H050G4YS 650V SuperGaN® FET in TO-247 (source tab) .
The TP65H050G4YS 650V, 50 mΩ gallium nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform.
TP65H050G4YS Features
* JEDEC-qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by
* Wide gate safety margin
* Transient over-voltage capability
* Enhanced inrush current capability
* Very low QRR
* Reduced crossover loss
Benefits
* Enable
TP65H050G4YS Applications
* Datacom
* Broad industrial
* PV inverter
* Servo motor
D
G
KS S
Cascode Schematic Symbol
Cascode Device Structure
Key Specifications
VDSS (V) VDSS(TR)(V) RDS(on)eff (mΩ) max
* 650 800 60
QRR (nC) typ
120
QG (nC) typ
16
* Dynamic on-resistance; see Figures 18 and 1
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