TP65H050G4YS - 650V FET
The TP65H050G4YS 650V, 50 mΩ gallium nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform.
It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance.
The Gen IV SuperGaN® platform uses advanced epi and
TP65H050G4YS Features
* JEDEC-qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by
* Wide gate safety margin
* Transient over-voltage capability
* Enhanced inrush current capability
* Very low QRR
* Reduced crossover loss Benefits
* Enable
