TP65H070L 650V GaN FET

Description

TP65H070L Series 650V GaN FET PQFN Series Preliminary .
The TP65H070L 650V, 72mΩ Gallium Nitride (GaN) FET are normally-off devices.

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Datasheet Specifications

Part number: TP65H070L
Manufacturer: Transphorm
File Size: 1.04 MB
Datasheet: TP65H070L-Transphorm.pdf
Description: 650V GaN FET

Features

* JEDEC qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by
* Intrinsic lifetime tests
* Wide gate safety margin
* Transient over-voltage capability
* Very low QRR
* Reduced crossover loss
* RoHS compliant and Ha

Applications

* Datacom
* Broad industrial
* PV inverter
* Servo motor Key Specifications VDSS (V) V(TR)DSS (V) RDS(on)eff (mΩ) max
* 650 800 85 QRR (nC) typ 90 QG (nC) typ 10
* Dynamic on-resistance; see Figures 5 and 6 Cascode Schematic Symbol February 17, 2019 tp65h070l.0 Casco

TP65H070L Distributors

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TP65H070L 650V GaN FET Transphorm

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