TP65H070L Datasheet (Transphorm)

TP65H070L, 650V GaN FET

The TP65H070L 650V, 72mΩ Gallium Nitride (GaN) FET are normally-off devices.

It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies *offering superior reliability and performance.

Transphorm GaN offers improved efficiency over silicon, through lower gat

TP65H070L Features

* JEDEC qualified GaN technology

* Dynamic RDS(on)eff production tested

* Robust design, defined by

* Intrinsic lifetime tests

* Wide gate safety margin

* Transient over-voltage capability

* Very low QRR

* Reduced crossover loss

* RoHS compliant and Ha