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TP65H070L

650V GaN FET

TP65H070L Features

* JEDEC qualified GaN technology

* Dynamic RDS(on)eff production tested

* Robust design, defined by

* Intrinsic lifetime tests

* Wide gate safety margin

* Transient over-voltage capability

* Very low QRR

* Reduced crossover loss

* RoHS compliant and Ha

TP65H070L General Description

The TP65H070L 650V, 72mΩ Gallium Nitride (GaN) FET are normally-off devices. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies

*offering superior reliability and performance. Transphorm GaN offers improved efficiency over silicon, through lower gat.

TP65H070L Datasheet (1.04 MB)

Preview of TP65H070L PDF

Datasheet Details

Part number:

TP65H070L

Manufacturer:

Transphorm

File Size:

1.04 MB

Description:

650v gan fet.

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TAGS

TP65H070L 650V GaN FET Transphorm

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