TP65H070G4RS 650V SuperGaN GaN FET

Renesas

Description

Specifications in this document are tentative and subject to change Datasheet TP65H070G4RS 650V SuperGaN® GaN FET in PQFN (source tab) .
The TP65H070G4RS 650V, 72mΩ Gallium Nitride (GaN) FET is a normally-off device.

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Datasheet Specifications

Part number: TP65H070G4RS
Manufacturer: Renesas ↗
File Size: 922.05 KB
Datasheet: TP65H070G4RS-Renesas.PDF
Description: 650V SuperGaN GaN FET

Features

* Gen IV technology
* JEDEC-qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by
* Wide gate safety margin
* Transient over-voltage capability
* Very low QRR
* Reduced crossover loss
* RoHS compliant and Halogen-free

Applications

* ▪ Datacom ▪ Broad industrial ▪ PV inverter ▪ Servo motor ▪ Computing D G KS S Cascode Schematic Symbol Cascode Device Structure TP65H070G4RS.1v3 Feb 05, 2024 Key Specifications VDSS (V) VDSS(TR) (V) RDS(on)eff (mΩ) max
* Qoss (nC) typ 650 800 85 78 QG (nC) typ 9
* Dynamic on-resista

TP65H070G4RS Distributors

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TP65H070G4RS 650V SuperGaN GaN FET Renesas

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