TP65H070G4RS Datasheet, Fet, Renesas

TP65H070G4RS Features

• Fet
• Gen IV technology
• JEDEC-qualified GaN technology
• Dynamic RDS(on)eff production tested
• Robust design, defined by
    – Wide gate safet

PDF File Details

Part number:

TP65H070G4RS

Manufacturer:

Renesas ↗

File Size:

922.05kb

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📄 Datasheet

Description:

650v supergan gan fet. The TP65H070G4RS 650V, 72mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-ofthe-art high voltage GaN HEMT and

TP65H070G4RS Application

• Applications ▪ Datacom ▪ Broad industrial ▪ PV inverter ▪ Servo motor ▪ Computing D G KS S Cascode Schematic Symbol Cascode Device Structure TP6

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TP65H070G4RS

Renesas

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