Datasheet Details
- Part number
- TP65H070G4RS
- Manufacturer
- Renesas ↗
- File Size
- 922.05 KB
- Datasheet
- TP65H070G4RS-Renesas.PDF
- Description
- 650V SuperGaN GaN FET
TP65H070G4RS Description
Specifications in this document are tentative and subject to change Datasheet TP65H070G4RS 650V SuperGaN® GaN FET in PQFN (source tab) .
The TP65H070G4RS 650V, 72mΩ Gallium Nitride (GaN) FET is a normally-off device.
TP65H070G4RS Features
* Gen IV technology
* JEDEC-qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by
* Wide gate safety margin
* Transient over-voltage capability
* Very low QRR
* Reduced crossover loss
* RoHS compliant and Halogen-free
TP65H070G4RS Applications
* ▪ Datacom ▪ Broad industrial ▪ PV inverter ▪ Servo motor ▪ Computing
D
G KS
S Cascode Schematic Symbol
Cascode Device Structure
TP65H070G4RS.1v3 Feb 05, 2024
Key Specifications
VDSS (V) VDSS(TR) (V) RDS(on)eff (mΩ) max
* Qoss (nC) typ
650 800 85 78
QG (nC) typ
9
* Dynamic on-resista
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