TP65H035G4YS Datasheet, Fet, Renesas

TP65H035G4YS Features

• Fet
• JEDEC qualified GaN technology
• Dynamic RDS(on)eff production tested
• Robust design, defined by
    – Wide gate safety margin
    – T

PDF File Details

Part number:

TP65H035G4YS

Manufacturer:

Renesas ↗

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956.32kb

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📄 Datasheet

Description:

650v supergan fet. The TP65H035G4YS 650V, 35 mΩ gallium nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform. It combines a state-

TP65H035G4YS Application

• Applications
• Datacom
• Broad industrial
• PV inverter
• Servo motor D G KS S Cascode Schematic Symbol Cascode D

TAGS

TP65H035G4YS

Renesas

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