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TP65H150G4LSGB - 650V GaN FET

Renesas

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Datasheet Details

Part number	TP65H150G4LSGB
Manufacturer	Renesas ↗
File Size	909.98 KB
Description	650V GaN FET
Datasheet	TP65H150G4LSGB-Renesas.pdf

TP65H150G4LSGB Product details

Description

The TP65H150G4LSGB 650V, 150mΩ Gallium Nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform.

Features

Gen IV technology.
JEDEC-qualified GaN technology.
Dynamic RDS(on)eff production tested.
Robust design, defined by.
Wide gate safety margin.
Transient over-voltage capability.
Very low QRR.
Reduced crossover loss.
RoHS compliant and Halogen-free packaging Benefits.
Achieves increased efficiency in both hard- and soft-switched circuits.
Increased power density.
Reduced system size and weight.
Overall lower syste.

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Published: Feb 21, 2025 |