TP65H035G4WS Datasheet - Transphorm

TP65H035G4WS SuperGaN FET

The TP65H035G4WS 650V, 35 mΩ gallium nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN™ platform uses advanced epi an.

TP65H035G4WS Features

* JEDEC qualified GaN technology

* Dynamic RDS(on)eff production tested

* Robust design, defined by

* Wide gate safety margin

* Transient over-voltage capability

* Enhanced inrush current capability

* Very low QRR

* Reduced crossover loss Benefits

* Enable

TP65H035G4WS-Transphorm.pdf

TP65H035G4WS Datasheet Preview — Preview of TP65H035G4WS PDF

Datasheet Details

Part number:

TP65H035G4WS

Manufacturer:

Transphorm

File Size:

1.32 MB

Description:

Supergan fet.

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TP65H035G4WS TP65H035G4WS SuperGaN FET Transphorm

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