TP65H100G4PS 650V SuperGaN GaN FET

Renesas

Description

Specifications in this document are tentative and subject to change Datasheet TP65H100G4PS 650V SuperGaN® GaN FET in TO-220 (source tab) .
The TP65H100G4PS650V, 92mΩ Gallium Nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform.

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Datasheet Specifications

Part number: TP65H100G4PS
Manufacturer: Renesas ↗
File Size: 744.46 KB
Datasheet: TP65H100G4PS-Renesas.pdf
Description: 650V SuperGaN GaN FET

Features

* Gen IV technology
* JEDEC-qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by
* Wide gate safety margin
* Transient over-voltage capability
* Very low QRR
* Reduced crossover loss
* RoHS compliant and Halogen-free

Applications

* Consumer
* Power adapters
* Low power SMPS
* Lighting G SD Cascode Schematic Symbol Cascode Device Structure Key Specifications VDS (V) min VDSS(TR) (V) max RDS(on) (mΩ) max
* QOSS (nC) typ QG (nC) typ
* Dynamic R ; DS(on) see Figures 18 and 19 650 800 110 56 14.4 TP65H1

TP65H100G4PS Distributors

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TP65H100G4PS 650V SuperGaN GaN FET Renesas

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