TP65H150LSG - 650V GaN FET
The TP65H150LSG 650V, 150mΩ Gallium Nitride (GaN) FET is a normally-off device.
It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies *offering superior reliability and performance.
Transphorm GaN offers improved efficiency over silicon, through lower
TP65H150LSG Features
* JEDEC qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by
* Intrinsic lifetime tests
* Wide gate safety margin
* Transient over-voltage capability
* Very low QRR
* Reduced crossover loss
* RoHS
