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TP65H150LSG 650V GaN FET

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Description

TP65H150LSG 650V GaN FET PQFN Series Preliminary .
The TP65H150LSG 650V, 150mΩ Gallium Nitride (GaN) FET is a normally-off device.

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Datasheet Specifications

Part number
TP65H150LSG
Manufacturer
Transphorm
File Size
0.96 MB
Datasheet
TP65H150LSG-Transphorm.pdf
Description
650V GaN FET

Features

* JEDEC qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by
* Intrinsic lifetime tests
* Wide gate safety margin
* Transient over-voltage capability
* Very low QRR
* Reduced crossover loss
* RoHS

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