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TP65H100G4LSGB

650V SuperGaN GaN FET

Image Manufacturer B2B MPN Description Distributor Stock Quantity Price Buy Now
Distributor Transphorm Inc TP65H100G4LSGB-TR Hi Volt FETs DigiKey 2950 1000 units
$2.88

TP65H100G4LSGB Datasheet (848.69 KB)

Preview of TP65H100G4LSGB PDF Datasheet

Datasheet Details

Part number:

TP65H100G4LSGB

Manufacturer:

Renesas ↗

File Size:

848.69 KB

Description:

650v supergan gan fet

TP65H100G4LSGB Features

* Gen IV technology

* JEDEC-qualified GaN technology

* Dynamic RDS(on)eff production tested

* Robust design, defined by

* Wide gate safety margin

* Transient over-voltage capability

* Very low QRR

* Reduced crossover loss

* RoHS compliant and Halogen-free

TP65H100G4LSGB General Description

The TP65H100G4LSGB 650V, 92mΩ Gallium Nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform uses advanced epi and.

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TP65H100G4LSGB 650V SuperGaN GaN FET Renesas

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TP65H100G4LSGB Distributor

Distributor
Transphorm Inc
TP65H100G4LSGB-TR
GaN FETs 650V, 100mohm GaN FET in 8x8 PQFN
Mouser Electronics
0 In Stock
Qty : 3000 units
Unit Price : $1.52