TP65H100G4LSGB Datasheet, Fet, Renesas

TP65H100G4LSGB Features

  • Fet
  • Gen IV technology
  • JEDEC-qualified GaN technology
  • Dynamic RDS(on)eff production tested
  • Robust design, defined by
      – Wide gate safet

PDF File Details

Part number:

TP65H100G4LSGB

Manufacturer:

Renesas ↗

File Size:

848.69kb

Download:

📄 Datasheet

Description:

650v supergan gan fet. The TP65H100G4LSGB 650V, 92mΩ Gallium Nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform. It combines a state

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TP65H100G4LSGB Application

  • Applications
  • Consumer
  • Power adapters
  • Low power SMPS
  • Lighting Key Specifications VDS (V) min VDSS(TR) (V) ma

TAGS

TP65H100G4LSGB
650V
SuperGaN
GaN
FET
Renesas

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Stock and price

part
Transphorm Inc
Hi Volt FETs
DigiKey
TP65H100G4LSGB-TR
2950 In Stock
Qty : 1000 units
Unit Price : $2.88
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