TP65H150G4PS 650V GaN FET

Renesas

Description

Specifications in this document are tentative and subject to change Datasheet TP65H150G4PS 650V SuperGaN® GaN FET in TO-220 (source tab) ).
Preliminary Datasheet The TP65H150G4PS 650V, 150mΩ Gallium Nitride (GaN) FET is a normally-off device.

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Datasheet Specifications

Part number: TP65H150G4PS
Manufacturer: Renesas ↗
File Size: 923.41 KB
Datasheet: TP65H150G4PS-Renesas.pdf
Description: 650V GaN FET

Features

* Gen IV technology
* JEDEC-qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by
* Wide gate safety margin
* Transient over-voltage capability
* Very low QRR
* Reduced crossover loss
* RoHS compliant and Halogen-free

Applications

* TP65H150G4PS 3 lead TO-220 Source
* Consumer TP65H150G4PS TO-220 (top view) S
* Power adapters
* Low power SMPS
* Lighting G SD Key Specifications VDS (V) min VDSS(TR) (V) max RDS(on) (mΩ) max
* 650 800 180 Qoss (nC) typ 34 QG (nC) typ 8
* Dynamic R ; DS(on) see

TP65H150G4PS Distributors

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TP65H150G4PS 650V GaN FET Renesas

Renesas TP65H150G4PS-like datasheet