TP70H300G4JSGB Datasheet - Renesas

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TP70H300G4JSGB 700V GaN FET

TP70H300G4JSGB 700V SuperGaN® GaN FET in PQFN (source tab) Datasheet .
The TP70H300G4JSGB 700V, 240mΩ Gallium Nitride (GaN) FET is a normally-off device that uses Renesas’ Gen IV platform.

TP70H300G4JSGB-Renesas.pdf

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Datasheet Details

Part number:

TP70H300G4JSGB

Manufacturer:

Renesas ↗

File Size:

833.57 KB

Description:

700V GaN FET

Features

* Gen IV technology
* JEDEC-qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by
* Transient over-voltage capability
* Operation with E-mode gate drivers without need for Zener protection.
* Very low QRR
* Reduced crossover loss

Applications

* Consumer
* Power adapters
* Low power SMPS
* Lighting Key Specifications VDS (V) 700 VDSS(TR)(V) 800 RDS(on) (mΩ) maximum [1] 312 QOSS (nC) typical 17 QG (nC) typical 5.4 1. Dynamic RDS(on); see Figure 21 and Figure 22. Cascode Schematic Symbol Cascode Device Structur

TP70H300G4JSGB Distributors

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