TP70H300G4JSGB - 700V GaN FET
The TP70H300G4JSGB 700V, 240mΩ Gallium Nitride (GaN) FET is a normally-off device that uses Renesas’ Gen IV platform.
It combines a state-of-theart high-voltage GaN HEMT with a low-voltage silicon MOSFET to offer superior reliability and performance.
The Gen IV SuperGaN® platform uses advanced epi a
TP70H300G4JSGB Features
* Gen IV technology
* JEDEC-qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by
* Transient over-voltage capability
* Operation with E-mode gate drivers without need for Zener protection.
* Very low QRR
* Reduced crossover loss
