TP70H300G4LSGB Datasheet - Renesas

700V GaN FET

TP70H300G4LSGB Features

* Gen IV technology

* JEDEC-qualified GaN technology

* Dynamic RDS(on)eff production tested

* Robust design, defined by

* Transient over-voltage capability

* Operation with E-mode gate drivers without need for Zener protection.

* Very low QRR

* Reduced crossover loss

TP70H300G4LSGB General Description

The TP70H300G4LSGB 700V, 240 mΩ Gallium Nitride (GaN) FET is a normally-off device that uses Renesas’ Gen IV platform. It combines a state-of-theart high-voltage GaN HEMT with a low-voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform uses advanced epi .

TP70H300G4LSGB Datasheet (833.44 KB)