TP70H150G4LSG Datasheet - Renesas

700V GaN FET

TP70H150G4LSG Features

* Gen IV technology

* JEDEC-qualified GaN technology

* Dynamic RDS(on)eff production tested

* Robust design, defined by

* Wide gate safety margin

* Transient over-voltage capability

* Very low QRR

* Reduced crossover loss

* RoHS compliant and Halogen-free packagin

TP70H150G4LSG General Description

The TP70H150G4LSG 700V, 150mΩ Gallium Nitride (GaN) FET is a normally-off device using Renesas’ Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform uses advanced epi and p.

TP70H150G4LSG Datasheet (817.42 KB)