TP70H150G4LSGB Datasheet - Renesas

650V GaN FET

TP70H150G4LSGB Features

* Gen IV technology

* JEDEC-qualified GaN technology

* Dynamic RDS(on)eff production tested

* Robust design, defined by

* Transient over-voltage capability

* Operation with E-mode Gate drivers without need for Zener protection

* Very low QRR

* Reduced crossover loss

TP70H150G4LSGB General Description

The TP70H150G4LSGB 700V, 150mΩ Gallium Nitride (GaN) FET is a normally-off device using Renesas’ Gen IV platform. It combines a state-of-theart high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform uses advanced epi and p.

TP70H150G4LSGB Datasheet (875.57 KB)