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TP70H150G4LSGB - 650V GaN FET

Renesas

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Datasheet Details

Part number: TP70H150G4LSGB
Manufacturer: Renesas ↗
File Size: 875.57 KB
Datasheet: TP70H150G4LSGB-Renesas.pdf
Description: 650V GaN FET

TP70H150G4LSGB Product details

Description

The TP70H150G4LSGB 700V, 150mΩ Gallium Nitride (GaN) FET is a normally-off device using Renesas’ Gen IV platform.

Features

Gen IV technology.
JEDEC-qualified GaN technology.
Dynamic RDS(on)eff production tested.
Robust design, defined by.
Transient over-voltage capability.
Operation with E-mode Gate drivers without need for Zener protection.
Very low QRR.
Reduced crossover loss.
RoHS compliant and Halogen-free packaging.
2 kV HBM ESD rating.

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650V GaN FET Renesas

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