TP65H300G4JSGB Datasheet, Fet, Renesas

TP65H300G4JSGB Features

• Fet
• Gen IV technology
• JEDEC-qualified GaN technology
• Dynamic RDS(on)eff production tested
• Robust design, defined by
    – Wide gate safet

PDF File Details

Part number:

TP65H300G4JSGB

Manufacturer:

Renesas ↗

File Size:

909.81kb

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📄 Datasheet

Description:

650v gan fet. The TP65H300G4JSGB 650V, 240mΩ Gallium Nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform. It combines a stat

TP65H300G4JSGB Application

• Applications
• Consumer
• Power adapters
• Low power SMPS
• Lighting Key Specifications VDS (V) min VDSS(TR) (V) m

TAGS

TP65H300G4JSGB

Renesas

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