TP65H300G4JSGB 650V GaN FET

Renesas

Description

Specifications in this document are tentative and subject to change Datasheet TP65H300G4JSGB 650V SuperGaN® GaN FET in PQFN (source tab) .
The TP65H300G4JSGB 650V, 240mΩ Gallium Nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform.

📥 Download Datasheet

TP65H300G4JSGB Datasheet Preview — Preview of TP65H300G4JSGB PDF

Datasheet Specifications

Part number: TP65H300G4JSGB
Manufacturer: Renesas ↗
File Size: 909.81 KB
Datasheet: TP65H300G4JSGB-Renesas.pdf
Description: 650V GaN FET

Features

* Gen IV technology
* JEDEC-qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by
* Wide gate safety margin
* Transient over-voltage capability
* Very low QRR
* Reduced crossover loss
* RoHS compliant and Halogen-free

Applications

* Consumer
* Power adapters
* Low power SMPS
* Lighting Key Specifications VDS (V) min VDSS(TR) (V) max RDS(on) (mΩ) max
* 650 800 312 Qoss (nC) typ 19 QG (nC) typ 3.5
* Dynamic R ; DS(on) see Figures 18 and 19 Cascode Schematic Symbol Cascode Device Structure TP65H30

TP65H300G4JSGB Distributors

📁 Related Datasheet

TP65H300G4LSG TP65H035G4QS TP65H035WS TP65H035WSQA TP65H050BS TP65H050WS

📌 All Tags

TP65H300G4JSGB 650V GaN FET Renesas

Renesas TP65H300G4JSGB-like datasheet