Datasheet4U.com

TP65H300G4JSGB - 650V GaN FET

Renesas

📥 Download Datasheet

TP65H300G4JSGB Datasheet Preview — Preview of TP65H300G4JSGB PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	TP65H300G4JSGB
Manufacturer	Renesas ↗
File Size	909.81 KB
Description	650V GaN FET
Datasheet	TP65H300G4JSGB-Renesas.pdf

TP65H300G4JSGB Product details

Description

The TP65H300G4JSGB 650V, 240mΩ Gallium Nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform.

Features

Gen IV technology.
JEDEC-qualified GaN technology.
Dynamic RDS(on)eff production tested.
Robust design, defined by.
Wide gate safety margin.
Transient over-voltage capability.
Very low QRR.
Reduced crossover loss.
RoHS compliant and Halogen-free packaging Benefits.
Achieves increased efficiency in both hard- and soft-switched circuits.
Increased power density.
Reduced system size and weight.
Overall lower syste.

📁 TP65H300G4JSGB Similar Datasheet

TP65H300G4LSG - GaN FET (Transphorm)
TP65H035G4QS - 650V FET (Transphorm)
TP65H035WS - 650V Cascode GaN FET (Transphorm)
TP65H035WSQA - 650V GaN FET (Transphorm)
TP65H050BS - GaN FET (Transphorm)
TP65H050WS - 650V GaN FET (Transphorm)
TP65H070L - 650V GaN FET (Transphorm)
TP65H070LDG - 650V GaN FET (Transphorm)

Other Datasheets by Renesas

TP65H300G4LSGB - 650V SuperGaN GaN FET
TP65H035G4WS - 650V FET
TP65H035G4YS - 650V SuperGaN FET
TP65H050G4BS - 650V SuperGaN FET
TP65H050G4QS - 650V FET
TP65H050G4WS - 650V FET

Published: Feb 21, 2025 |