TP65H300G4LSG Datasheet - Transphorm

TP65H300G4LSG GaN FET

The TP65H300G4WS 650V, 240 mΩ Super Gallium Nitride (SuperGaN™) FET is a normally-off device. It combines stateof-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies *offering superior reliability and performance. SuperGaN is Transphorm’s latest GaN platform, which uses .

TP65H300G4LSG Features

* Gen IV technology

* JEDEC-qualified GaN technology

* Dynamic RDS(on) production tested

* Robust design, defined by

* Intrinsic lifetime tests

* Wide gate safety margin

* Transient over-voltage capability

* Very low QRR

* Reduced crossover loss Benef

TP65H300G4LSG Datasheet (1.32 MB)

TP65H300G4LSG Datasheet Preview — Preview of TP65H300G4LSG PDF

Datasheet Details

Part number:

TP65H300G4LSG

Manufacturer:

Transphorm

File Size:

1.32 MB

Description:

Gan fet.

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TAGS

TP65H300G4LSG GaN FET Transphorm

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