TP65H300G4LSG - GaN FET
The TP65H300G4WS 650V, 240 mΩ Super Gallium Nitride (SuperGaN™) FET is a normally-off device.
It combines stateof-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies *offering superior reliability and performance.
SuperGaN is Transphorm’s latest GaN platform, which uses
TP65H300G4LSG Features
* Gen IV technology
* JEDEC-qualified GaN technology
* Dynamic RDS(on) production tested
* Robust design, defined by
* Intrinsic lifetime tests
* Wide gate safety margin
* Transient over-voltage capability
* Very low QRR
* Reduced crossover loss Benef
