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TP65H300G4LSG - GaN FET

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Datasheet Details

Part number	TP65H300G4LSG
Manufacturer	Transphorm
File Size	1.32 MB
Description	GaN FET
Datasheet	TP65H300G4LSG-Transphorm.pdf

TP65H300G4LSG Product details

Description

The TP65H300G4WS 650V, 240 mΩ Super Gallium Nitride (SuperGaN™) FET is a normally-off device. offering superior reliability and performance.

Features

Gen IV technology.
JEDEC-qualified GaN technology.
Dynamic RDS(on) production tested.
Robust design, defined by.
Intrinsic lifetime tests.
Wide gate safety margin.
Transient over-voltage capability.
Very low QRR.
Reduced crossover loss Benefits.
Enables AC-DC bridgeless totem-pole PFC designs.
Increased power density.
Reduced system size and weight.
Overall lower system cost.
Achieves increased effici.

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Published: Aug 10, 2020 |