TP65H300G4LSGB 650V SuperGaN GaN FET

Renesas

Description

Specifications in this document are tentative and subject to change Datasheet TP65H300G4LSGB 650V SuperGaN® GaN FET in PQFN (source tab) PDereslcimri.

📥 Download Datasheet

TP65H300G4LSGB Datasheet Preview — Preview of TP65H300G4LSGB PDF

Datasheet Specifications

Part number: TP65H300G4LSGB
Manufacturer: Renesas ↗
File Size: 931.19 KB
Datasheet: TP65H300G4LSGB-Renesas.pdf
Description: 650V SuperGaN GaN FET

Features

* Gen IV technology
* JEDEC-qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by
* Wide gate safety margin
* Transient over-voltage capability
* Very low QRR
* Reduced crossover loss
* RoHS compliant and Halogen-free

Applications

* Consumer
* Power adapters
* Low power SMPS
* Lighting Key Specifications VDS (V) min VDSS(TR) (V) max RDS(on) (mΩ) max
* 650 800 312 QRR (nC) typ 23 QG (nC) typ 9.6
* Dynamic R ; DS(on) see Figures 18 and 19 TP65H300G4LSGB.1v1 Oct 23, 2023Oct 3, 2024 Page 1 © 2024

TP65H300G4LSGB Distributors

📁 Related Datasheet

TP65H300G4LSG TP65H035G4QS TP65H035WS TP65H035WSQA TP65H050BS TP65H050WS

📌 All Tags

TP65H300G4LSGB 650V SuperGaN GaN FET Renesas

Renesas TP65H300G4LSGB-like datasheet