TP65H300G4LSGB - 650V SuperGaN GaN FET
Specifications in this document are tentative and subject to change Datasheet TP65H300G4LSGB 650V SuperGaN® GaN FET in PQFN (source tab) PDereslcimripintaioryn Datasheet The TP65H300G4LSGB 650V, 240mΩ Gallium Nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform.
It combines a state-ofthe-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance.
The Gen IV SuperGaN® platform uses advanced epi and patented design technologies
TP65H300G4LSGB Features
* Gen IV technology
* JEDEC-qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by
* Wide gate safety margin
* Transient over-voltage capability
* Very low QRR
* Reduced crossover loss
* RoHS compliant and Halogen-free
