TP65H300G4LSGB Datasheet - Renesas

TP65H300G4LSGB 650V SuperGaN GaN FET

Specifications in this document are tentative and subject to change Datasheet TP65H300G4LSGB 650V SuperGaN® GaN FET in PQFN (source tab) PDereslcimripintaioryn Datasheet The TP65H300G4LSGB 650V, 240mΩ Gallium Nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform. It combines a state-ofthe-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform uses advanced epi and patented design technologies.

TP65H300G4LSGB Features

* Gen IV technology

* JEDEC-qualified GaN technology

* Dynamic RDS(on)eff production tested

* Robust design, defined by

* Wide gate safety margin

* Transient over-voltage capability

* Very low QRR

* Reduced crossover loss

* RoHS compliant and Halogen-free

TP65H300G4LSGB-Renesas.pdf