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TP65H480G4JSGB - 650V SuperGaN GaN FET

Renesas

The TP65H480G4JSGB by Renesas is a 650V SuperGaN GaN FET. Below is the official datasheet preview.

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TP65H480G4JSGB 650V SuperGaN GaN FET by Renesas - Datasheet Preview — Official preview page of the TP65H480G4JSGB 650V SuperGaN GaN FET datasheet (Renesas).

Datasheet Details

Part number	TP65H480G4JSGB
Manufacturer	Renesas
File Size	897.46 KB
Description	650V SuperGaN GaN FET
Datasheet	TP65H480G4JSGB-Renesas.pdf
Additional preview pages of the TP65H480G4JSGB datasheet.

TP65H480G4JSGB Product details

Description

The TP65H480G4JSGB 650V, 480mΩ Gallium Nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform.

Features

Gen IV technology.
JEDEC-qualified GaN technology.
Dynamic RDS(on)eff production tested.
Robust design, defined by.
Wide gate safety margin.
Transient over-voltage capability.
Very low QRR.
Reduced crossover loss.
RoHS compliant and Halogen-free packaging Benefits.
Achieves increased efficiency in both hard- and soft-switched circuits.
Increased power density.
Reduced system size and weight.
Overall lower syste.

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Published: Jan 30, 2025 |