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TP65H480G4JSGB Datasheet - Renesas

TP65H480G4JSGB 650V SuperGaN GaN FET

The TP65H480G4JSGB 650V, 480mā„¦ Gallium Nitride (GaN) FET is a normally-off device using Renesasā€™s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaNĀ® platform uses advanced epi and.

TP65H480G4JSGB Features

* Gen IV technology

* JEDEC-qualified GaN technology

* Dynamic RDS(on)eff production tested

* Robust design, defined by

* Wide gate safety margin

* Transient over-voltage capability

* Very low QRR

* Reduced crossover loss

* RoHS compliant and Halogen-free

TP65H480G4JSGB Datasheet (897.46 KB)

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Datasheet Details

Part number:

TP65H480G4JSGB

Manufacturer:

Renesas ā†—

File Size:

897.46 KB

Description:

650v supergan gan fet.

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TAGS

TP65H480G4JSGB 650V SuperGaN GaN FET Renesas

TP65H480G4JSGB Distributor