TP65H480G4JSGB

650V SuperGaN GaN FET

Renesas

TP65H480G4JSGB Features

* Gen IV technology

* JEDEC-qualified GaN technology

* Dynamic RDS(on)eff production tested

* Robust design, defined by

* Wide gate safety margin

* Transient over-voltage capability

* Very low QRR

* Reduced crossover loss

* RoHS compliant and Halogen-free

TP65H480G4JSGB General Description

The TP65H480G4JSGB 650V, 480mΩ Gallium Nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform uses advanced epi and.

TP65H480G4JSGB Datasheet (897.46 KB)