G60N10T N-Channel Enhancement Mode Power MOSFET D.
Fairchild Semiconductor
G60N100 - NPT IGBT
FGL60N100BNTD — 1000 V, 60 A NPT Trench IGBT FGL60N100BNTD 1000 V, 60 A NPT Trench IGBT Features • High Speed Switching • Low Saturation Voltage: VCE.
Fairchild Semiconductor
G60N100BNTD - NPT IGBT
FGL60N100BNTD — 1000 V, 60 A NPT Trench IGBT FGL60N100BNTD 1000 V, 60 A NPT Trench IGBT Features • High Speed Switching • Low Saturation Voltage: VCE.
Taiwan Semiconductor
G60N100CE - TSG60N100CE
1SMA4741 thru 1SMA200Z SURFACE MOUNT SILICON ZENDER DIODE PRODUCT SUMMARY 1.0 Watts Surface Mount FEATURES For surface mounted applications in order.
Taiwan Semiconductor
TSG60N100CE - N-Channel IGBT
1SMA4741 thru 1SMA200Z SURFACE MOUNT SILICON ZENDER DIODE PRODUCT SUMMARY 1.0 Watts Surface Mount FEATURES For surface mounted applications in order.
GOFORD
G60N10 - N-Channel Enhancement Mode Power MOSFET
G60N10T N-Channel Enhancement Mode Power MOSFET Description The G60N10T uses advanced trench technology to provide excellent RDS(ON) , low gate char.
GOFORD
G60N10T - N-Channel Enhancement Mode Power MOSFET
G60N10T N-Channel Enhancement Mode Power MOSFET Description The G60N10T uses advanced trench technology to provide excellent RDS(ON) , low gate char.
