Global Mixed-mode Technology Inc. G901 3.3V 300m.
GTM
G9013 - NPN EPITAXIAL TRANSISTOR
www.DataSheet4U.com ISSUED DATE :2004/11/18 REVISED DATE : G9013 Description N P N E PI TA XI A L T R AN S I S TO R The G9013 is designed for use i.
Agere Systems
D2526G901 - D2570/ D2526/ D2555 Wavelength-Selected Direct Modulated Isolated DFB Laser Module
Data Sheet, Rev. 3 July 2001 D2570, D2526, D2555 Wavelength-Selected Direct Modulated Isolated DFB Laser Module Applications s Three direct-modulate.
Fairchild Semiconductor
FDG901D - Slew Rate Control Driver
FDG901D April 2002 FDG901D Slew Rate Control Driver IC for P-Channel MOSFETs General Description The FDG901D is specifically designed to control the.
Fuji Electric
YG901C2 - LOW LOSS SUPER HIGH SPEED RECTIRIER
For more information, contact: Collmer Semiconductor, Inc. P.O. Box 702708 Dallas, TX 75370 972-733-1700 972-381-9991 Fax http://www.collmer.com .
Fuji Electric
YG901C2R - LOW LOSS SUPER HIGH SPEED DIODE
YG901C2R L L D (200V / 5A TO-22OF15) Outline Drawings 10±0.5 ø3.2 +0.2 -0.1 LOW LOSS SUPER HIGH SPEED DIODE 4.5±0.2 2.7±0.2 6.3 2.7±0.2 Features .
Fuji Electric
YG901C3 - LOW LOSS SUPER HIGH SPEED DIODE
For more information, contact: Collmer Semiconductor, Inc. P.O. Box 702708 Dallas, TX 75370 972-733-1700 972-381-9991 Fax http://www.collmer.com .
GTM
G9015 - PNP EPITAXIAL TRANSISTOR
www.DataSheet4U.com ISSUED DATE :2004/11/18 REVISED DATE : G9015 Description P N P E PI TA XI A L PL AN A R T RA N SI STO R The G9015 is designed f.
ETC
3DG9014 - SILICON NPN TRANSISTOR
9014(3DG9014) NPN /SILICON NPN TRANSISTOR :、。 Purpose: Low frequency, low noise amplifier. :PC ,hFE , 9015(3CG9015)。 Features: High PC and hFE exc.
Global Mixed-mode Technology
G901 - 3.3 V 300MA LOW DROPOUT REGULATOR
Global Mixed-mode Technology Inc. G901 3.3V 300mA Low Dropout Regulator Features Dropout voltage typically 0.45V @ IO = 300mA Output current in.
Fuji Electric
YG901C3R - LOW LOSS SUPER HIGH SPEED DIODE
YG901C3R LLD (300V / 5A TO-22OF15) Outline Drawings 10±0.5 ø3.2 +0.2 -0.1 LOW LOSS SUPER HIGH SPEED DIODE 4.5±0.2 2.7±0.2 6.3 2.7±0.2 Features Lo.
JILIN SINO
3CG9012 - PNP EPITAXIAL SILICON TRANSISTOR
PNP PNP EPITAXIAL SILICON TRANSISTOR R 3CG9012 MAIN CHARACTERISTICS Package IC VCEO PC -500mA -20V 625mW APPLICATIONS z z High frequency .
Westcode Semiconductor
WG9014 - 600-1400 Gate Turn Off Thyristor - Capsule Type
www.DataSheet4U.com GATE CONTROLLED DEVICE - Gate Turn Off Thyristors - Capsule Type VDRM New Part Number VGK = 2V (V) Notes 1&2 WG5025Rx WG6018Rx WG.
GTM
G9012 - PNP EPITAXIAL TRANSISTOR
www.DataSheet4U.com ISSUED DATE :2004/11/18 REVISED DATE : G9012 Description P N P E PI TA XI A L T R AN S I S TO R The G9012 is designed for use i.
Analog Devices
ADG901 - Wideband 40 dB Isolation at 1 GHz CMOS 1.65V to 2.75V SPST Switches
0 Hz to 4.5 GHz, 40 dB Off Isolation at 1 GHz, 17 dBm P1dB at 1 GHz SPST Switches Data Sheet ADG901/ADG902 FEATURES ADG901 absorptive switch ADG902.
SAGRAD
SG901-1071 - Miniature Wi-Fi Radio
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TG9015 - RF Attenuator
RF Attenuator Negative Control Voltage: 0 to -10 Volts Model TG9015 5 to 1000 MHz www.DataSheet4U.com SPECTRUM MICROWAVE • 2144 Franklin Drive N.E.
FOSHAN BLUE ROCKET
BR3DG9014W - Silicon NPN transistor
9014W(BR3DG9014W) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-323 NPN 。Silicon NPN transistor in a SOT-323 Plastic Package. / Features PC ,hF.
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3CG9015 - SILICON PNP TRANSISTOR
9015(3CG9015) PNP /SILICON PNP TRANSISTOR :、。/Purpose: Low frequency, low noise amplifier. :PC ,hFE , 9014(3DG9014)。/Features: High PC, excellent h.
Global Components
G901AS-DC24-NIL2 - Relay
G90 n Features n Typical Applications Switching capacity up to 30A, Power switching 240VAC in miniature construction Various contact arrang.
GTM
G9018 - NPN epitaxial planar transistor
G9018 NPN EPITAXIAL PLANAR TRANSISTOR Description The G9018 is designed for use in AM/FM amplifier and local oscillator of FM/VHF tuner. Package Di.