GAA Datasheet | Specifications & PDF Download

Matched GaAs SPDT Switch DC - 2 GHz Features q q q SW-331, SW-333 V 2.00 SW-331 (CR-2) Miniature Ceramic Package Fast Switching Speed, 7 ns Typical

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GaAs Transfer Switch DC - 3 GHz Features q q q SW-283 V3.00 CR-4 16 15 14 13 Small Ceramic Package, 0.250 Sq Fast Switching Speed, 4 ns Typica

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CGY 121 A GaAs MMIC Preliminary Datasheet l l l l l l l RF-in; -Vg Vcontrol 6 RF-GND 5 4 Variable gain amplifier (MMIC-Amplifier) for mobile communi

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40um 6GHz Analog InGaAs PIN photodiode V4.1HIPD-001 20-10-01 Model: LSIPD-A40 Features:  High reliability, low dark current  800-1700nm spectral ra

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MG970 GaAs Hall Element Matrix Opto Co., Ltd -MG970 GaAs Hall Element- MG970  Linear GaAs Hall Element  Excellent Thermal Characteristics  SSI

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GaAs-Infrarot-Lumineszenzdiode (950 nm, Enhanced Power) GaAs Infrared Emitting Diode (950 nm, Enhanced Power) F 0118G Vorläufige Daten / Preliminary

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InGaAs PIN photodiodes G12181 series Long wavelength type (cutoff wavelength: 1.85 to 1.9 µm) Features Cutoff wavelength: 1.85 to 1.9 µm Low cost Pho

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50um Ultra low dark current Analog InGaAs PIN photodiode V4.1HIPD-002 20-10-01 Model: LSIPD-LD50 Features:  High reliability, Ultra low dark curre

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1mm InGaAs PIN photodiode Model: LSIPD-L1 Features:  High reliability, low dark current  Top illumination Planar PIN PD  Active diameter 1mm  TO4

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Data Sheet PS2503-1, PS2503L-1 LOW INPUT CURRENT, HIGH SPEED SWITCHING R08DS0204EJ0100 Rev.1.00 Dec 25, 2020 DESCRIPTION The PS2503-1 and PS2503L-1

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Datasheet Specifications in this document are tentative and subject to change. RL78/G1A R01DS0151EJ0230 RENESAS MCU Rev.2.30 Apr 26, 2024 Combin

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D10040220G TH 401000 MHz GaAs Power Doubler Hybrid D10040220GTH 40-1000MHz GaAs POWER DOUBLER HYBRID Package: SOT-115J Product Description The D10

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Data Sheet PS2503-1, PS2503L-1 LOW INPUT CURRENT, HIGH SPEED SWITCHING R08DS0204EJ0100 Rev.1.00 Dec 25, 2020 DESCRIPTION The PS2503-1 and PS2503L-1

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75um 2.5GHz Analog InGaAs PIN photodiode V4.1HIPD-003 20-10-01 Model: LSIPD-A75 Features:  High reliability, low dark current  800-1700nm spectral

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Notice: Some parametric limits are subject to change MITSUBISHI LASER DIODES ML9xx19 SERIES 2.5Gbps InGaAsP DFB LASER DIODE TYPE NAME ML925B19F / M

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Product Description Sirenza Microdevices’ SNA-486 is a GaAs HBT MMIC Amplifier housed in a low-cost, surface-mountable plastic package. The heterojunc

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GaAs-Infrarot-Lumineszenzdiode (950 nm, 300 µm Kantenlänge) GaAs Infrared Emitting Diode(950 nm, 12 mil) F 0118J Vorläufige Daten / Preliminary data

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800-2200nm 0.5mm InGaAs PIN Photodiode V4.1LWPD-010 21-10-01 Model: LSIPD22-0.5 Features:  Low noise, High reliability  800-2200nm wide wavelengt

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