GB-1A Datasheet | Specifications & PDF Download

Crystalfontz America, Inc. 15611 East Washington Road Valleyford, WA 99036 Phone: (509) 291-3514 Fax: (509) 291-3345 http://www.crystalfontz.com ema

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CXK77B3611AGB -5/6 High Speed Bi-CMOS Synchronous Static RAM Description The CXK77B3611AGB-5/6 is a high speed 1M bit Bi-CMOS synchronous static RAM o

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ESMT Flash PRODUCT LIST Parameters VCC Width Frequency Internal ECC Correction Transfer Rate Loading Throughput Power-up Ready Time Max Reset Busy Tim

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EiceDRIVER™ gate driver 1EDI3051AS Single channel isolated IGBT/SiC-MOSFET driver Features • Single channel isolated IGBT/SiC driver using coreless t

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HGTP5N120BN, HGT1S5N120BNS Data Sheet January 2000 File Number 4599.2 21A, 1200V, NPT Series N-Channel IGBTs The HGTP5N120BN and the HGT1S5N120BNS ar

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DATA SHEET www.DataSheet4U.com 4GB Registered DDR2 SDRAM DIMM EBE41AE4ABHA (512M words × 72 bits, 2 Ranks) Specifications • Density: 4GB • Organizat

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ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7V ~ 1.95V)  Organization x8: - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit

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GBJ35005A THRU GBJ3510A RoHS COMPLIANT Bridge Rectifiers Features ● UL recognition, file #E230084 ● Glass passivated chip junction ● Thin single in

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HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS Data Sheet January 2000 File Number 4597.2 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyper

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PRELIMINARY DATA SHEET www.DataSheet4U.com 4GB VLP Registered DDR2 SDRAM DIMM EBE41AF4A1QA (512M words × 72 bits, 2 Ranks) Specifications • Density:

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ESMT Flash FEATURES z Voltage Supply: 2.6V ~ 3.6V z Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit z Automatic

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EiceDRIVER™ SIL High Voltage IGBT Driver for Automotive Applications 1EDI2001AS Single Channel Isolated Driver for Inverter Systems AD Step Datasheet

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DATA SHEET www.DataSheet4U.com 4GB Registered DDR2 SDRAM DIMM EBE41AE4ACFA (512M words × 72 bits, 2 Ranks) Specifications • Density: 4GB • Organizat

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NGD8201N, NGD8201AN Ignition IGBT 20 A, 400 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitr

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GT80J101A TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT80J101A High Power Switching Applications Unit: mm Enhancement-Mode High

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AO-1501/1501A ZigBee Transceiver Module Features Reliable wireless transceiver module. Compatible with Peer to Peer, Star, Tree, or Mesh network conf

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Magnetic Transducer (without driving circuit) KPM-1201A series Magnetic Buzzer DIMENSIONS 35 FREQUENCY RESPONSE [actual curve of type] applied vol

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Features • Offers high breakdown voltage to 1350V for improved reliability LSH15N135F1 A FS IGBT 1350V, 15A, 1.75V • Powerful monolithic body diode

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CXK77B3611AGB -5/6 High Speed Bi-CMOS Synchronous Static RAM Description The CXK77B3611AGB-5/6 is a high speed 1M bit Bi-CMOS synchronous static RAM o

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PRELIMINARY DATA SHEET www.DataSheet4U.com 4GB VLP Registered DDR2 SDRAM DIMM EBE41AF4A1QB (512M words × 72 bits, 2 Ranks) Specifications • Density:

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