GaALAs Datasheet | Specifications & PDF Download

GaAlAs Infrared Emitting Diodes TO-46 Lensed Package — 880 nm VTE1163 PACKAGE DIMENSIONS inch (mm) DESCRIPTION CASE 24 TO-46 HERMETIC (Lensed) CHI

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GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description The MIE-536L3U is infrared emitting diodes in GaAlAs technology molded in pastel blue trans

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Semiconductor Laser LNC802PS GaAlAs Semiconductor Laser ø5.6 +0 –0.025 ø4.3±0.1 ø3.55±0.1 ø1.0 min. Y 0.4±0.1 110˚±1˚ Unit : mm 2 Features Low thre

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62005 GaAlAs LIGHT EMITTING DIODE “PILL PACK” Mii OPTOELECTRONIC PRODUCTS DIVISION REVISED 02/22/01 Features: • • • • • Hermetically sealed High o

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62005 GaAlAs LIGHT EMITTING DIODE “PILL PACK” Mii OPTOELECTRONIC PRODUCTS DIVISION REVISED 02/22/01 Features: • • • • • Hermetically sealed High o

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Product Bulletin OP294 June 1996 GaAlAs Plastic Infrared Emitting Diode Types OP294, OP299 Features • Characterized at 5mA for battery operated syst

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HL7851G GaAlAs Laser Diode Description www.DataSheet4U.com structure. It is suitable as a light source for optical disk memories, levelers and variou

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Infrared Light Emitting Diodes LN189S GaAlAs Infrared Light Emitting Diode Unit : mm Light source for distance measuring systems 5.0±0.3 6.0±0.3 3.4

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Infrared Light Emitting Diodes LN671 GaAlAs Infrared Light Emitting Diode Light source for distance measuring systems 4 5.3 max. 5.0±0.1 2.54±0.1 3 1

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GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description The MIE-514H4 is a GaAlAs infrared LED having a peak wavelength at 850 nm . It f

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62005 GaAlAs LIGHT EMITTING DIODE “PILL PACK” Mii OPTOELECTRONIC PRODUCTS DIVISION REVISED 02/22/01 Features: • • • • • Hermetically sealed High o

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62074 FIBER OPTIC GaAlAs LIGHT EMITTING DIODE Mii OPTOELECTRONIC PRODUCTS DIVISION Features: • • • • Hermetically Sealed High Radiant Output for Fi

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62074 FIBER OPTIC GaAlAs LIGHT EMITTING DIODE Mii OPTOELECTRONIC PRODUCTS DIVISION Features: • • • • Hermetically Sealed High Radiant Output for Fi

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GaAlAs Infrared Emitting Diodes T-1¾ (5 mm) Bullet Package — 880 nm VTE1285 PACKAGE DIMENSIONS inch (mm) DESCRIPTION CASE 62 T-1¾ (5 mm) BULLET CH

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GaAlAs-Lumineszenzdiode (660 nm) GaAlAs Light Emitting Diode (660 nm) SFH 464 ø0.45 2.54 mm spacing Chip position ø4.3 ø4.1 1 0.9 .1 1.1 .9 0 2.7

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GaAlAs-IR-Lumineszenzdioden (880 nm) GaAlAs Infrared Emitters (880 nm) SFH 480 SFH 481 SFH 482 2.54mm spacing ø0.45 ø4.8 ø4.6 1 0.9 .1 Chip posi

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U IR Emitting Diode in ø 5 mm (T–1¾ ) GaAs/GaAlAs 4 t Packageee at .D w Description TSAL7400 is a high efficiency infrared emitting diode in GaAlAs on

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www.DataSheet4U.com HE8807SG/FL GaAlAs Infrared Emitting Diodes Description The HE8807SG/FL are single heterojunction structure GaAlAs light emittin

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