* Red light emission close to monochromatic light : λP = 680 nm High-power output, high-efficiency : PO = 3 mW High coupling characteristics and suits to a plastic fiber High-speed response :
* 3dB modulation of 10 MHz Flat resin package : ø 4.8 mm 12.5±1.0 4.4±0.3 1.0 2-1.0±0.1 2- 0.6±0.15
LNA4501F
Panasonic Semiconductor
41.23 KB
Gaalas red light emitting diode.
Visible Light Emitting Diodes (Red) LNA4501F GaAlAs Red Light Emitting Diode For optical fiber communications and control systems 5.0±0.2 ø4.8±0.2 ø.
📁 Related Datasheet
LNA4401L GaAlAs Infrared Light Emitting Diode (Panasonic Semiconductor)
LNA4602L GaAlAs Infrared Light Emitting Diode (Panasonic Semiconductor)
LNA4801L GaAlAs Infrared Light Emitting Diode (Panasonic Semiconductor)
LNA4905L GaAs Infrared Light Emitting Diode (Panasonic Semiconductor)
LNA2601L GaAs Infrared Light Emitting Diode (Panasonic Semiconductor)
LNA2603F GaAs Infrared Light Emitting Diode (Panasonic Semiconductor)
LNA2606L GaAlAs on GaAs Infrared Light Emitting Diode (Panasonic Semiconductor)
LNA2701L GaAs Bi-directional Infrared Light Emitting Diode (Panasonic Semiconductor)
LNA2702L GaAs Bi-directional Infrared Light Emitting Diodes (Panasonic Semiconductor)
LNA2801L GaAlAs on GaAs Infrared Light Emitting Diode (Panasonic Semiconductor)
