LNA4801L - GaAlAs Infrared Light Emitting Diode

Panasonic Semiconductor

Datasheet Details

Part number	LNA4801L
Manufacturer	Panasonic ↗ Semiconductor
File Size	34.97 KB
Description	GaAlAs Infrared Light Emitting Diode
Datasheet	LNA4801L_PanasonicSemiconductor.pdf

Fast response and high-speed modulation capability : fC = 20 MHz (typ. ) Wide directivity : θ = 22 deg. (typ. ) Transparent epoxy resin package ø3.8±0.2 ø3.0±0.2 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature.
Symbol PD IF IFP.
VR Topr Tstg Ratings 190 100 1 3.
25 to +85.
30 to +100 Unit mW mA A V ˚C ˚C 1.0 15.0±1.0 4.5±0.3 5.0±0.2 0.6.

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Published: Mar 22, 2005 |