LNA4801L GaAlAs Infrared Light Emitting Diode

Panasonic Semiconductor

Description

Infrared Light Emitting Diodes LNA4801L GaAlAs Infrared Light Emitting Diode Unit : mm Not soldered 2.0 max.2-0.8 max.2-0.5±0.1 0.5±0.1 (1.5) 2.54 .

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Datasheet Specifications

Part number: LNA4801L
Manufacturer: Panasonic Semiconductor
File Size: 34.97 KB
Datasheet: LNA4801L_PanasonicSemiconductor.pdf
Description: GaAlAs Infrared Light Emitting Diode

Features

* Fast response and high-speed modulation capability : fC = 20 MHz (typ. ) Wide directivity : θ = 22 deg. (typ. ) Transparent epoxy resin package ø3.8±0.2 ø3.0±0.2 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating

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LNA4801L GaAlAs Infrared Light Emitting Diode Panasonic Semiconductor

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