* High output power, high-efficiency : (15 mW min.)
* Quick response, high speed modulation (fC=30 MHz typ.)
* Transparent epoxy resin package φ5±0.2 1 4.4±0.3 1 12.0±1.0 14.0±1.0 5.7±0.2 s Absolute Maximum Ratings Ta=25°C Parameter Power dissipation Forward current(DC) P
LNA4905L
Panasonic Semiconductor
21.03 KB
Gaas infrared light emitting diode.
Infrared Light Emitting Diodes LNA4905L GaAs Infrared Light Emitting Diode Unit : mm 5.7±0.2 2 Max. Not soldered For optical control equipment s Fea.
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