LNA4905L GaAs Infrared Light Emitting Diode

Panasonic Semiconductor

Description

Infrared Light Emitting Diodes LNA4905L GaAs Infrared Light Emitting Diode Unit : mm 5.7±0.2 2 Max.Not soldered For optical control equipment s Fea.

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Datasheet Specifications

Part number: LNA4905L
Manufacturer: Panasonic Semiconductor
File Size: 21.03 KB
Datasheet: LNA4905L_PanasonicSemiconductor.pdf
Description: GaAs Infrared Light Emitting Diode

Features

* High output power, high-efficiency : (15 mW min. )
* Quick response, high speed modulation (fC=30 MHz typ. )
* Transparent epoxy resin package φ5±0.2 1 4.4±0.3 1 12.0±1.0 14.0±1.0 5.7±0.2 s Absolute Maximum Ratings Ta=25°C Parameter Power dissipation Forward current(DC) P

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LNA4905L GaAs Infrared Light Emitting Diode Panasonic Semiconductor

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