Part number:
LNA2603F
Manufacturer:
Panasonic Semiconductor
File Size:
42.38 KB
Description:
Gaas infrared light emitting diode.
LNA2603F_PanasonicSemiconductor.pdf
Datasheet Details
LNA2603F Features
* High-power output, high-efficiency : PO = 6 mW (typ.) Emitted light spectrum suited for silicon photodetectors : λP = 940 nm (typ.) Long lifetime, high reliability Thin side-view type package 3.9±0.25 4.5±0.15 3.5±0.15 2.1±0.15 1.6±0.15 0.8±0.1 12.8 min. (2.95) 2-1.2±0.3 2-0.45±0.15 0.45±0.15
LNA2603F_PanasonicSemiconductor.pdf
Datasheet Details
LNA2603F
Panasonic Semiconductor
42.38 KB
Gaas infrared light emitting diode.
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