LNA2603F GaAs Infrared Light Emitting Diode

Panasonic Semiconductor

Description

Infrared Light Emitting Diodes LNA2603F GaAs Infrared Light Emitting Diode Unit : mm Not soldered 0.8 max.For optical control systems 1.5±0.2 Feat.

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Datasheet Specifications

Part number: LNA2603F
Manufacturer: Panasonic Semiconductor
File Size: 42.38 KB
Datasheet: LNA2603F_PanasonicSemiconductor.pdf
Description: GaAs Infrared Light Emitting Diode

Features

* High-power output, high-efficiency : PO = 6 mW (typ. ) Emitted light spectrum suited for silicon photodetectors : λP = 940 nm (typ. ) Long lifetime, high reliability Thin side-view type package 3.9±0.25 4.5±0.15 3.5±0.15 2.1±0.15 1.6±0.15 0.8±0.1 12.8 min. (2.95) 2-1.2±0.3 2-0.45±0.15 0.45±0.15

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LNA2603F GaAs Infrared Light Emitting Diode Panasonic Semiconductor

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