LNA2603F

GaAs Infrared Light Emitting Diode

Panasonic Semiconductor

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	Panasonic Electronic Components	LNA2603F	EMITTER IR 940NM 100MA RADIAL	DigiKey	0	0	$0	🛒 Buy Now

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LNA2603F

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Panasonic Semiconductor

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42.38 KB

Description:

Gaas infrared light emitting diode.
Infrared Light Emitting Diodes LNA2603F GaAs Infrared Light Emitting Diode Unit : mm Not soldered 0.
.8 max. For optical control systems 1.5±0.2 Features High-power output, high-efficiency : PO = 6 m.

✔ LNA2603F Features

High-power output, high-efficiency : PO = 6 mW (typ.) Emitted light spectrum suited for silicon photodetectors : λP = 940 nm (typ.) Long lifetime, high reliability Thin s

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LNA2603F GaAs Infrared Light Emitting Diode Panasonic Semiconductor

Datasheet Details

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Description:

✔ LNA2603F Features

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