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LNA2606L - GaAlAs on GaAs Infrared Light Emitting Diode

Panasonic Semiconductor

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Datasheet Details

Part number	LNA2606L
Manufacturer	Panasonic ↗ Semiconductor
File Size	21.54 KB
Description	GaAlAs on GaAs Infrared Light Emitting Diode
Datasheet	LNA2606L_PanasonicSemiconductor.pdf

LNA2606L Product details

Features

High-power output, high-efficiency: PO = 9 mW min.
Emitted light spectrum suited for silicon photodetectors.
Ultra-miniature, thin side-view type package.
Long lifetime, high reliability 1.95±0.25 3.0±0.3 0.8 φ1.1 R0.5 1.4±0.2 0.9 0.5 3.5±0.3 12 min. 2.4 1.1 Not soldered 2.15 max. 1.1 2.
0.5±0.15 0.3±0.15 s Absolute Maximum Ratings Ta = 25°C Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating.

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Published: Mar 22, 2005 |