LNA2606L Datasheet - Panasonic Semiconductor

LNA2606L - GaAlAs on GaAs Infrared Light Emitting Diode

LNA2606L Features

* High-power output, high-efficiency: PO = 9 mW min.

* Emitted light spectrum suited for silicon photodetectors

* Ultra-miniature, thin side-view type package

* Long lifetime, high reliability 1.95±0.25 3.0±0.3 0.8 φ1.1 R0.5 1.4±0.2 0.9 0.5 3.5±0.3 12 min. 2.4 1.

Datasheet Details

LNA2606L

Panasonic Semiconductor

21.54 KB

Gaalas on gaas infrared light emitting diode.

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