LNA2606L GaAlAs on GaAs Infrared Light Emitting Diode

Panasonic Semiconductor

Description

Infrared Light Emitting Diodes LNA2606L GaAlAs on GaAs Infrared Light Emitting Diode Unit: mm 0.8 max.For optical control systems s .

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Datasheet Specifications

Part number: LNA2606L
Manufacturer: Panasonic Semiconductor
File Size: 21.54 KB
Datasheet: LNA2606L_PanasonicSemiconductor.pdf
Description: GaAlAs on GaAs Infrared Light Emitting Diode

Features

* High-power output, high-efficiency: PO = 9 mW min.
* Emitted light spectrum suited for silicon photodetectors
* Ultra-miniature, thin side-view type package
* Long lifetime, high reliability 1.95±0.25 3.0±0.3 0.8 φ1.1 R0.5 1.4±0.2 0.9 0.5 3.5±0.3 12 min. 2.4 1.

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LNA2606L GaAlAs GaAs Infrared Light Emitting Diode Panasonic Semiconductor

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