Part number:
LNA2801L
Manufacturer:
Panasonic Semiconductor
File Size:
40.23 KB
Description:
Gaalas on gaas infrared light emitting diode.
LNA2801L_PanasonicSemiconductor.pdf
Datasheet Details
LNA2801L Features
* High-power output, high-efficiency : Ie = 6 mW/sr (min.) Emitted light spectrum suited for silicon photodetectors Good radiant power output linearity with respect to input current ø3 plastic package Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward
LNA2801L_PanasonicSemiconductor.pdf
Datasheet Details
LNA2801L
Panasonic Semiconductor
40.23 KB
Gaalas on gaas infrared light emitting diode.
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