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LNA2801L Datasheet - Panasonic Semiconductor

LNA2801L - GaAlAs on GaAs Infrared Light Emitting Diode

LNA2801L Features

* High-power output, high-efficiency : Ie = 6 mW/sr (min.) Emitted light spectrum suited for silicon photodetectors Good radiant power output linearity with respect to input current ø3 plastic package Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward

LNA2801L_PanasonicSemiconductor.pdf

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Datasheet Details

Part number:

LNA2801L

Manufacturer:

Panasonic Semiconductor

File Size:

40.23 KB

Description:

Gaalas on gaas infrared light emitting diode.

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