* High-power output, high-efficiency : Ie = 6 mW/sr (min.) Emitted light spectrum suited for silicon photodetectors Good radiant power output linearity with respect to input current ø3 plastic package Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward
LNA2801L
Panasonic Semiconductor
40.23 KB
Gaalas on gaas infrared light emitting diode.
Infrared Light Emitting Diodes LNA2801L GaAlAs on GaAs Infrared Light Emitting Diode Unit : mm Not soldered 2.0 max. 2-0.8 max. 2-0.5±0.1 0.5±0.1 2 (.
📁 Related Datasheet
LNA2802L GaAs Infrared Light Emitting Diode (Panasonic Semiconductor)
LNA2601L GaAs Infrared Light Emitting Diode (Panasonic Semiconductor)
LNA2603F GaAs Infrared Light Emitting Diode (Panasonic Semiconductor)
LNA2606L GaAlAs on GaAs Infrared Light Emitting Diode (Panasonic Semiconductor)
LNA2701L GaAs Bi-directional Infrared Light Emitting Diode (Panasonic Semiconductor)
LNA2702L GaAs Bi-directional Infrared Light Emitting Diodes (Panasonic Semiconductor)
LNA2901L GaAs Infrared Light Emitting Diode (Panasonic Semiconductor)
LNA2903L GaAs Infrared Light Emitting Diode (Panasonic Semiconductor)
LNA2904L GaAs Infrared Light Emitting Diode (Panasonic Semiconductor)
LNA2W01L GaAs Infrared Light Emitting Diode (Panasonic Semiconductor)
