Datasheet4U Logo Datasheet4U.com

LNA2801L Datasheet - Panasonic Semiconductor

GaAlAs on GaAs Infrared Light Emitting Diode

LNA2801L Features

* High-power output, high-efficiency : Ie = 6 mW/sr (min.) Emitted light spectrum suited for silicon photodetectors Good radiant power output linearity with respect to input current ø3 plastic package Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward

LNA2801L Datasheet (40.23 KB)

Preview of LNA2801L PDF

Datasheet Details

Part number:

LNA2801L

Manufacturer:

Panasonic Semiconductor

File Size:

40.23 KB

Description:

Gaalas on gaas infrared light emitting diode.
Infrared Light Emitting Diodes LNA2801L GaAlAs on GaAs Infrared Light Emitting Diode Unit : mm Not soldered 2.0 max. 2-0.8 max. 2-0.5±0.1 0.5±0.1 2 (.

📁 Related Datasheet

LNA2802L GaAs Infrared Light Emitting Diode (Panasonic Semiconductor)

LNA2601L GaAs Infrared Light Emitting Diode (Panasonic Semiconductor)

LNA2603F GaAs Infrared Light Emitting Diode (Panasonic Semiconductor)

LNA2606L GaAlAs on GaAs Infrared Light Emitting Diode (Panasonic Semiconductor)

LNA2701L GaAs Bi-directional Infrared Light Emitting Diode (Panasonic Semiconductor)

LNA2702L GaAs Bi-directional Infrared Light Emitting Diodes (Panasonic Semiconductor)

LNA2901L GaAs Infrared Light Emitting Diode (Panasonic Semiconductor)

LNA2903L GaAs Infrared Light Emitting Diode (Panasonic Semiconductor)

LNA2904L GaAs Infrared Light Emitting Diode (Panasonic Semiconductor)

LNA2W01L GaAs Infrared Light Emitting Diode (Panasonic Semiconductor)

TAGS

LNA2801L GaAlAs GaAs Infrared Light Emitting Diode Panasonic Semiconductor

Image Gallery

LNA2801L Datasheet Preview Page 2

LNA2801L Distributor