LNA2801L - GaAlAs on GaAs Infrared Light Emitting Diode

Panasonic Semiconductor

Datasheet Details

Part number	LNA2801L
Manufacturer	Panasonic ↗ Semiconductor
File Size	40.23 KB
Description	GaAlAs on GaAs Infrared Light Emitting Diode
Datasheet	LNA2801L_PanasonicSemiconductor.pdf

High-power output, high-efficiency : Ie = 6 mW/sr (min. ) Emitted light spectrum suited for silicon photodetectors Good radiant power output linearity with respect to input current ø3 plastic package Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature.
Symbol PD IF IFP.
VR Topr Tstg Ratings 75 50 1 3.
25 to +85.
40 to +100 Unit mW mA A V ˚C ˚.

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Published: Mar 22, 2005 |