Datasheet Specifications
- Part number
- LNA2801L
- Manufacturer
- Panasonic Semiconductor
- File Size
- 40.23 KB
- Datasheet
- LNA2801L_PanasonicSemiconductor.pdf
- Description
- GaAlAs on GaAs Infrared Light Emitting Diode
Description
Infrared Light Emitting Diodes LNA2801L GaAlAs on GaAs Infrared Light Emitting Diode Unit : mm Not soldered 2.0 max.2-0.8 max.2-0.5±0.1 0.5±0.1 2 (.
Features
* High-power output, high-efficiency : Ie = 6 mW/sr (min. ) Emitted light spectrum suited for silicon photodetectors Good radiant power output linearity with respect to input current ø3 plastic package Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forwardLNA2801L Distributors
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