LNA2701L GaAs Bi-directional Infrared Light Emitting Diode

Panasonic Semiconductor

Description

Infrared Light Emitting Diodes LNA2701L GaAs Bi-directional Infrared Light Emitting Diode 8˚ 8˚ Unit : mm For light source of VCR (VHS System) 0.5 .

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Datasheet Specifications

Part number: LNA2701L
Manufacturer: Panasonic Semiconductor
File Size: 43.97 KB
Datasheet: LNA2701L_PanasonicSemiconductor.pdf
Description: GaAs Bi-directional Infrared Light Emitting Diode

Features

* Two-way directivity High-power output, high-efficiency : PO = 1.8 mW (min. ) Small resin package Long lifetime, high reliability Thin type package modified from LN59 2.8±0.2 2-C0.5 8˚ 26 .5 ˚ 3.8±0.2 2.4±0.2 0.8 ø1.4±0.2 8˚ 8˚ 1.0 26 .5˚ 16.9±1.0 Not soldered 2.0 0.8 2.8±0.2 1.3±0.2 8˚ 2-

Applications

* Light source for tape end sensor of VCR and video camera recorder of VHS system Light source for 2-bit photo sensor 0.5±0.1 2 1 2.0 1: Anode 2: Cathode Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambien

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LNA2701L GaAs Bi-directional Infrared Light Emitting Diode Panasonic Semiconductor

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