* Two-way directivity High-power output, high-efficiency : PO = 1.8 mW (min.) Small resin package Long lifetime, high reliability Thin type package modified from LN59 2.8±0.2 2-C0.5 8˚ 26 .5 ˚ 3.8±0.2 2.4±0.2 0.8 ø1.4±0.2 8˚ 8˚ 1.0 26 .5˚ 16.9±1.0 Not soldered 2.0 0.8 2.8±0.2 1.3±0.2 8˚ 2-
LNA2701L
Panasonic Semiconductor
43.97 KB
Gaas bi-directional infrared light emitting diode.
Infrared Light Emitting Diodes LNA2701L GaAs Bi-directional Infrared Light Emitting Diode 8˚ 8˚ Unit : mm For light source of VCR (VHS System) 0.5 .
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