* High-power output, high-efficiency Emitted light spectrum suited for silicon photodetectors Ultra-miniature, thin side-view type package Infrared light emission close to monochromatic light : λP = 950 nm 3.0±0.3 ø1.1 R0.5 1.95±0.25 1.4±0.2 0.9 0.5 12 min. Not Soldered 2.15 max. 2-0.5±0.15 0.3±
LNA2601L
Panasonic Semiconductor
41.84 KB
Gaas infrared light emitting diode.
Infrared Light Emitting Diodes LNA2601L GaAs Infrared Light Emitting Diode Unit : mm 3.5±0.3 2.4 1.1 0.8 max. 1.1 0.8 For optical control systems Fe.
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