Part number:
LNA2802L
Manufacturer:
Panasonic Semiconductor
File Size:
40.41 KB
Description:
Gaas infrared light emitting diode.
Datasheet Details
LNA2802L Features
* High-power output, high-efficiency : PO = 5 mW (typ.) Emitted light spectrum suited for silicon photodetectors : λP = 940 nm (typ.) Good radiant power output linearity with respect to input current Long lifetime, high reliability ø3 plastic package (1.5) ø3.8±0.2 ø3.0±0.2 1.0 2.54 Parameter Power
Datasheet Details
LNA2802L
Panasonic Semiconductor
40.41 KB
Gaas infrared light emitting diode.
📁 Related Datasheet
LNA2801L GaAlAs on GaAs Infrared Light Emitting Diode (Panasonic Semiconductor)
LNA2601L GaAs Infrared Light Emitting Diode (Panasonic Semiconductor)
LNA2603F GaAs Infrared Light Emitting Diode (Panasonic Semiconductor)
LNA2606L GaAlAs on GaAs Infrared Light Emitting Diode (Panasonic Semiconductor)
LNA2701L GaAs Bi-directional Infrared Light Emitting Diode (Panasonic Semiconductor)
LNA2702L GaAs Bi-directional Infrared Light Emitting Diodes (Panasonic Semiconductor)
LNA2901L GaAs Infrared Light Emitting Diode (Panasonic Semiconductor)
LNA2903L GaAs Infrared Light Emitting Diode (Panasonic Semiconductor)
LNA2904L GaAs Infrared Light Emitting Diode (Panasonic Semiconductor)
LNA2W01L GaAs Infrared Light Emitting Diode (Panasonic Semiconductor)
LNA2802L Distributor
