Part number:
LNA2802L
Manufacturer:
Panasonic Semiconductor
File Size:
40.41 KB
Description:
Gaas infrared light emitting diode.
LNA2802L_PanasonicSemiconductor.pdf
Datasheet Details
LNA2802L Features
* High-power output, high-efficiency : PO = 5 mW (typ.) Emitted light spectrum suited for silicon photodetectors : λP = 940 nm (typ.) Good radiant power output linearity with respect to input current Long lifetime, high reliability ø3 plastic package (1.5) ø3.8±0.2 ø3.0±0.2 1.0 2.54 Parameter Power
LNA2802L_PanasonicSemiconductor.pdf
Datasheet Details
LNA2802L
Panasonic Semiconductor
40.41 KB
Gaas infrared light emitting diode.
LNA2802L Distributor
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