LNA2802L - GaAs Infrared Light Emitting Diode

Panasonic Semiconductor

Datasheet Details

Part number	LNA2802L
Manufacturer	Panasonic ↗ Semiconductor
File Size	40.41 KB
Description	GaAs Infrared Light Emitting Diode
Datasheet	LNA2802L_PanasonicSemiconductor.pdf

High-power output, high-efficiency : PO = 5 mW (typ. ) Emitted light spectrum suited for silicon photodetectors : λP = 940 nm (typ. ) Good radiant power output linearity with respect to input current Long lifetime, high reliability ø3 plastic package (1.5) ø3.8±0.2 ø3.0±0.2 1.0 2.54 Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature.
Symbol PD IF IFP.
VR Topr Tstg Ratings 75 50 1 3.
25.

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Published: Mar 22, 2005 |