Datasheet Specifications
- Part number
- LNA2802L
- Manufacturer
- Panasonic Semiconductor
- File Size
- 40.41 KB
- Datasheet
- LNA2802L_PanasonicSemiconductor.pdf
- Description
- GaAs Infrared Light Emitting Diode
Description
Infrared Light Emitting Diodes LNA2802L GaAs Infrared Light Emitting Diode Unit : mm Not soldered 2.0 max.2-0.8 max.2-0.5±0.1 0.5±0.1 For optical .
Features
* High-power output, high-efficiency : PO = 5 mW (typ. ) Emitted light spectrum suited for silicon photodetectors : λP = 940 nm (typ. ) Good radiant power output linearity with respect to input current Long lifetime, high reliability ø3 plastic package (1.5) ø3.8±0.2 ø3.0±0.2 1.0 2.54 Parameter PowerLNA2802L Distributors
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