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LNA2802L Datasheet - Panasonic Semiconductor

LNA2802L - GaAs Infrared Light Emitting Diode

LNA2802L Features

* High-power output, high-efficiency : PO = 5 mW (typ.) Emitted light spectrum suited for silicon photodetectors : λP = 940 nm (typ.) Good radiant power output linearity with respect to input current Long lifetime, high reliability ø3 plastic package (1.5) ø3.8±0.2 ø3.0±0.2 1.0 2.54 Parameter Power

LNA2802L_PanasonicSemiconductor.pdf

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Datasheet Details

Part number:

LNA2802L

Manufacturer:

Panasonic Semiconductor

File Size:

40.41 KB

Description:

Gaas infrared light emitting diode.

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