LNA2802L

GaAs Infrared Light Emitting Diode

Panasonic Semiconductor

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Datasheet Details

Part number:

LNA2802L

Manufacturer:

Panasonic Semiconductor

File Size:

40.41 KB

Description:

Gaas infrared light emitting diode.
Infrared Light Emitting Diodes LNA2802L GaAs Infrared Light Emitting Diode Unit : mm Not soldered 2.
.0 max. 2-0.8 max. 2-0.5±0.1 0.5±0.1 For optical control systems Features High-power output, high-e.

✔ LNA2802L Features

High-power output, high-efficiency : PO = 5 mW (typ.) Emitted light spectrum suited for silicon photodetectors : λP = 940 nm (typ.) Good radiant power output linearity wi

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LNA2802L GaAs Infrared Light Emitting Diode Panasonic Semiconductor

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Panasonic Electronic Components

LNA2802L

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544 In Stock

Qty : 129 units

Unit Price : $0.26

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