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LNA4401L GaAlAs Infrared Light Emitting Diode

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Description

Infrared Light Emitting Diodes LNA4401L GaAlAs Infrared Light Emitting Diode ø4.6±0.15 Unit : mm Glass lens For optical control systems .

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Datasheet Specifications

Part number
LNA4401L
Manufacturer
Panasonic Semiconductor
File Size
35.23 KB
Datasheet
LNA4401L_PanasonicSemiconductor.pdf
Description
GaAlAs Infrared Light Emitting Diode

Features

* High-power output, high-efficiency : PO = 10 mW (typ. ) Fast response and high-speed modulation capability : fC = 20 MHz (typ. ) TO-18 standard type package 12.7 min. 6.3±0.3 2-ø0.45±0.05 2.54±0.25 0 0± 1. .2 .1 5 3˚ 45± Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward curre

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