LNA4401L - GaAlAs Infrared Light Emitting Diode

Panasonic Semiconductor

Datasheet Details

Part number	LNA4401L
Manufacturer	Panasonic ↗ Semiconductor
File Size	35.23 KB
Description	GaAlAs Infrared Light Emitting Diode
Datasheet	LNA4401L_PanasonicSemiconductor.pdf

High-power output, high-efficiency : PO = 10 mW (typ. ) Fast response and high-speed modulation capability : fC = 20 MHz (typ. ) TO-18 standard type package 12.7 min. 6.3±0.3 2-ø0.45±0.05 2.54±0.25 0 0± 1. .2 .1 5 3˚ 45± Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature.
1. 2 1 Symbol PD IF IFP.
Ratings 190 100 1 3.
25 to +85.
30 to +100.

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Published: Mar 22, 2005 |