CCPAK1212 GAN039-650NBB 650 V, 33 mOhm Gallium N.
TRinno
TGAN20N135FD - Field Stop Trench IGBT
Features: •1350V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operatio.
TRinno
TGAN40N60F2DS - Field Stop Trench IGBT
Features • 600V Fast Field Stop Trench Technology • Low Switching Loss for a Wide Temperature Range • Positive Temperature Coefficient • Easy Parallel.
Custom MMIC
CMD218 - 5-9 GHz GaN Low Noise Amplifier
CMD218 5-9 GHz GaN Low Noise Amplifier Features ► High gain ► Low noise figure ► High linearity ► High RF power survivability ► Small die size Descri.
GaN Systems
GS-065-011-6-LR - 700V E-mode GaN transistor
Features • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, 8x8 mm PDFN package • RDS(on) = 125 mΩ •.
GaN Systems
GS-065-011-2-L - 650V E-mode GaN transistor
Features • 650 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled 8x8 mm PDFN package • RDS(on) = 150 mΩ • .
Qorvo
QPA2213 - 2Watt GaN Amplifier
QPA2213 ® 2 – 20 GHz 2 Watt GaN Amplifier Product Overview Qorvo’s QPA2213 is a packaged wide band driver amplifier fabricated on Qorvo’s productio.
TRinno
TGAN40N60FD - Field Stop Trench IGBT
Features • 600V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operation.
TIANBO GANGLIAN ELECTRONICS
HJR-3FF-S-Z - Relay
TIANBO GANGLIAN ELECTRONICS HJR-3FF HJR-3FF SPECIFICATION FILE NUMBER: P-08KA501A DATE: 2001/11/02 ■ Features 10A switching capability Small footpr.
Kemet
A700D187M002ATE015 - (A700 Series) Polymer Aluminum Organic Capacitor
KEMET Aluminum Organic Capacitor (AO-CAP) A700 Series Polymer Aluminum Overview The KEMET Aluminum Organic Capacitor (AO-CAP) is a solid state alumin.
Kemet
A700D127M006ATE015 - (A700 Series) Polymer Aluminum Organic Capacitor
KEMET Aluminum Organic Capacitor (AO-CAP) A700 Series Polymer Aluminum Overview The KEMET Aluminum Organic Capacitor (AO-CAP) is a solid state alumin.
TriQuint Semiconductor
TGA2623 - GaN Power Amplifier
Applications X-band radar TGA2623 10 – 11GHz 35W GaN Power Amplifier Product Features Frequency Range: 10 – 11GHz PSAT: 45.5dBm @ PIN = 18dBm .
TriQuint Semiconductor
TGA2590 - 30W GaN Power Amplifier
Applications Electronic Warfare Commercial and Military Radar TGA2590 6-12 GHz 30W GaN Power Amplifier Product Features Frequency Range: 6 - 1.
Panasonic
MS614 - Coin-type Manganese Silicon Rechargeable Lithium Batteries
MS614 Coin-type Manganese Silicon Rechargeable Lithium Batteries Features & Benefits • Small but high capacity batteries using silicon for the negati.
Wolfspeed
GTVA261701FA - Thermally-Enhanced High Power RF GaN on SiC HEMT
GTVA261701FA Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 – 2690 MHz Description The GTVA261701FA is a 170-watt (P3dB) GaN on Si.
Wolfspeed
GTRA262802FC - Thermally-Enhanced High Power RF GaN on SiC HEMT
GTRA262802FC Thermally-Enhanced High Power RF GaN on SiC HEMT 250 W, 48 V, 2490 – 2690 MHz Description The GTRA262802FC is a 250-watt (P3dB) GaN on Si.
GaN Systems
GS-065-004-1-L - 650V E-mode GaN transistor
Please note that GaN Systems is an Infineon Technologies Company The document following this cover page is marked as “GaN Systems” document as this is.
GaN Systems
GS-065-014-6-L - 700V E-mode GaN transistor
Features • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 5x6 mm PDFN package • RDS(on) = 95.
Qorvo
QPA1022 - 4 W GaN Power Amplifier
QPA1022 ® 8.5 – 11 GHz 4 W GaN Power Amplifier Product Overview Qorvo’s QPA1022 is a packaged, high performance power amplifier fabricated on Qorvo.
Qorvo
QPB0220 - Wideband GaN SSPA
QPB0220 2 – 18 GHz Wideband GaN SSPA Product Description An excellent alternative to traveling wave tube amplifiers, Qorvo’s Spatium™ QPB0220 is a so.
