GS61008P 100V enhancement mode GaN transistor

GaN Systems

Description

GS61008P Bottom-side cooled 100 V E-mode GaN transistor Datasheet .
The GS61008P is an enhancement mode GaN-onsilicon power transistor.

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Datasheet Specifications

Part number: GS61008P
Manufacturer: GaN Systems
File Size: 827.41 KB
Datasheet: GS61008P-GaNSystems.pdf
Description: 100V enhancement mode GaN transistor

Features

* 100 V enhancement mode power transistor
* Bottom-side cooled configuration
* RDS(on) = 7 mΩ
* IDS(max) = 90 A
* Ultra-low FOM die
* Low inductance GaNPX® package
* Simple gate drive requirements (0 V to 6 V)
* Transient tolerant gate

Applications

* Energy Storage Systems
* AC-DC Converters (secondary side)
* Uninterruptable Power Supplies
* Industrial Motor Drives
* Fast Battery Charging
* Class D Audio amplifiers
* Traction Drive
* Robotics
* Wireless Power Transfer De

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GS61008P 100V enhancement mode GaN transistor GaN Systems

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