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GS61008P - 100V enhancement mode GaN transistor

GS61008P Description

GS61008P Bottom-side cooled 100 V E-mode GaN transistor Datasheet .
The GS61008P is an enhancement mode GaN-onsilicon power transistor.

GS61008P Features

* 100 V enhancement mode power transistor
* Bottom-side cooled configuration
* RDS(on) = 7 mΩ
* IDS(max) = 90 A
* Ultra-low FOM die
* Low inductance GaNPX® package
* Simple gate drive requirements (0 V to 6 V)
* Transient tolerant gate

GS61008P Applications

* Energy Storage Systems
* AC-DC Converters (secondary side)
* Uninterruptable Power Supplies
* Industrial Motor Drives
* Fast Battery Charging
* Class D Audio amplifiers
* Traction Drive
* Robotics
* Wireless Power Transfer De

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Datasheet Details

Part number
GS61008P
Manufacturer
GaN Systems
File Size
827.41 KB
Datasheet
GS61008P-GaNSystems.pdf
Description
100V enhancement mode GaN transistor

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100V enhancement mode GaN transistor GaN Systems
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