HA-2520, HA-2522, HA-2525 Data Sheet September 199.
Inchange Semiconductor
2SC2522 - Silicon NPN Power Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 120V(Min) ·Fast Switching Speed ·Wide Area of Safe .
Fuji Electric
2SK2522-01MR - N-channel MOS-FET
2SK2522-01MR FAP-II Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarant.
Anpec Electronics Coropration
APM2522NU - N-Channel MOSFET
APM2522NU N-Channel Enhancement Mode MOSFET Features • 25V/30A, RDS(ON)=14.5mΩ (Typ.) @ VGS=10V RDS(ON)=21.5mΩ (Typ.) @ VGS=4.5V • Super High Dense .
Intersil Corporation
HA-2522 - 20MHz/ High Slew Rate/ Uncompensated/ High Input Impedance/ Operational Amplifiers
HA-2520, HA-2522, HA-2525 Data Sheet September 1998 File Number 2894.3 20MHz, High Slew Rate, Uncompensated, High Input Impedance, Operational Amplifi.
Intersil Corporation
HA2-2522-2 - 20MHz/ High Slew Rate/ Uncompensated/ High Input Impedance/ Operational Amplifiers
HA-2520, HA-2522, HA-2525 Data Sheet September 1998 File Number 2894.3 20MHz, High Slew Rate, Uncompensated, High Input Impedance, Operational Amplifi.
Vanguard Semiconductor
VS2522AL - P-Channel Advanced Power MOSFET
VS2522AL -20V/-6A P-Channel Advanced Power MOSFET Features P-Channel，-2.5V Logic Level Control Enhancement mode Low on-resistance RDS(on) @ VGS.
Supertex Inc
TP2522 - P-Channel Enhancement-Mode Vertical DMOS FETs
Supertex inc. TP2522 P-Channel Enhancement-Mode Vertical DMOS FET Features ►►Low threshold (-2.4V max.) ►►High input impedance ►►Low input capacita.
SiGe Semiconductor Inc.
SE2522BL - RangeCharger 2.4GHz +23 dBm Power Amplifier
SE2522BL RangeCharger™ 2.4GHz +23 dBm Power Amplifier Preliminary Information Applications DSSS 2.4GHz WLAN (IEEE802.11b) OFDM 2.4GHz WLAN (IEEE802.1.
SiGe Semiconductor Inc.
SE2522L - RangeCharger 2.4 GHz Power Amplifier And Power Detector
SE2522L RangeCharger™ 2.4 GHz Power Amplifier And Power Detector IC Preliminary Information Applications IEEE 802.11b DSSS radios, Wireless LAN 2.4GHz.
SiGe Semiconductor Inc.
SE2522L-EK1 - RangeCharger 2.4 GHz Power Amplifier And Power Detector
SE2522L RangeCharger™ 2.4 GHz Power Amplifier And Power Detector IC Preliminary Information Applications IEEE 802.11b DSSS radios, Wireless LAN 2.4GHz.
SiGe Semiconductor Inc.
SE2522L-R - RangeCharger 2.4 GHz Power Amplifier And Power Detector
SE2522L RangeCharger™ 2.4 GHz Power Amplifier And Power Detector IC Preliminary Information Applications IEEE 802.11b DSSS radios, Wireless LAN 2.4GHz.
Renesas Technology
H5N2522FN - Silicon N Channel MOS FET High Speed Power Switching
www.DataSheet4U.com H5N2522FN Silicon N Channel MOS FET High Speed Power Switching REJ03G1573-0210 Rev.2.10 May 08, 2007 Features • Low on-resistanc.
Linkas
LS2522 - 2-Channel NiMH Battery Charger IC
2 Channel * 2 cells NiMH battery charger IC LS2522 - 2 *2 . MOS ( IC . 4 10 . LED : , , RC . . : 4.5~ 5.5 Volt. : LS2522: SOP-16 (150 mil). (.
Renesas Technology
H5N2522LS - Silicon N Channel MOS FET High Speed Power Switching
H5N2522LS Silicon N Channel MOS FET High Speed Power Switching REJ03G1667-0100 Rev.1.00 Apr 23, 2008 Features • Low on-resistance • Low leakage curre.
INCHANGE
BU2522AX - NPN Transistor
isc Silicon NPN Power Transistor BU2522AX DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V (Min) ·High Switching Speed ·Minimum .
INCHANGE
BU2522DF - NPN Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·High Switching Speed ·High Voltage ·Built-in Ddamper Ddiode ·Minimum Lot-to-Lot variations for robust d.
INCHANGE
BU2522AF - NPN Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V(Min) ·High Switching Speed ·Minimum Lot-to.
Microchip
TP2522 - P-Channel Vertical DMOS FET
TP2522 P-Channel Enhancement-Mode Vertical DMOS FET Features • –2.4V Maximum Low Threshold • High Input Impedance • 125 pF Maximum Low Input Capacita.
