HA-P Datasheet | Specifications & PDF Download

3.7A, 20V N 　N 　N-Channel Enhancement Mode Field Effect Transistor SMD 　　Features 　■20V, 3.7A, RDS(ON)=50mΩ @ VGS=4.5V 　■High dense cell design fo

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Product Folder Order Now Technical Documents Tools & Software Support & Community BQ24725A SLUSAL0C – SEPTEMBER 2011 – REVISED JANUARY 2020 BQ247

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100A 【】 BTA100 Series Specially Varieties 4Q-Triacs 　：NPNPN，，； 　：；、；、。 　：、、、、、、；。 Part Number BTA100-600B BTA100-800B BTA100-1000B BTA100-1200B B

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MS23P01S P-Channel Enhancement Mode Power MOSFET Description The MS23P01S uses advanced trench technology to provide excellent RDS(ON), low gate char

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LED constant current control chip RM9003B General Description ： RM9003B is a one_stage LED constant current driving control chip which Compatible wit

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CHIPSET-IC.COM N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 20mΩ ID 12A G UIS,

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD13009 DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collect

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Product Folder Order Now Technical Documents Tools & Software Support & Community bq24780S SLUSC27C – APRIL 2015 – REVISED MARCH 2017 bq24780S 1-

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isc Adjustable Voltage Regulator INCHANGE Semiconductor LM317 FEATURES ·Output Voltage Range :1.2V to 37V ·Output Current In Excess of 1.5A ·0.1% Li

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AXS2030 5.2W AB/D AXS2030、5.2W  AB/D AB/D。EMIFM  D： 。 －5.2W (VDD=5.0V, RL =2Ω，THD+N=10%)  AB： AXS2030PSRR －5.2W (VDD=5.0V, RL =2Ω，THD

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Silicon N-Channel Power MOSFET ○R CS150N03 A8 General Description： CS150N03 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced tr

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IP5513 TWS Bluetooth Earphone Charging Box SOC integrated with MCU 1. Features  Flexible and low-cost customized program  Package: SOP16  Disch

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HAA9809 ,4 ,AB /D ,5.4W HAA9809，、AB/D  AB、D ，4Ω5.4W  4 。  ，Charge_pump6.6V HAA9809，  D： ，， －5.4W (VDD=4.5V, RL =4Ω，NCN OFF THD+N=10%

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ChipSourceTek LTK5328PBTL_28W  LTK5328 LTK5328 2 8W ， PBTL 、、AGC 、AB/D 、 、 EMI。PBTL ， ，。 ， ，， ，。 LTK5328 2 ALC ， ，。 AB/D ，AB FM 。 RF 。  L

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LTK5325 25.3WG   LTK5325 2 5.3W ，、、AB/D 。、 EMI， ，， ， ，。LTK5325  2.8V-5.5V  BOOST   （ALC）  D 、 EMI 2 ，  、 ，。  THD+N=10%，VB

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Spec. No. SAMSUNG SDI Confidential Proprietary INR18650-35E Version No. Ver. 1.1 SPECIFICATION OF PRODUCT for Lithium-ion rechargeable cell Model na

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Machine Translated by Google IP2312 Single-cell lithium battery synchronous switch buck charging IC 1 Features ÿ Synchronous switch step-down chargi

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HAA2018 AB /D ，5.3W HAA2018FM、AB/D、、  AB、D 5.3W。EMI  D： FM。 －5.3W (VDD=5.0V, RL =2Ω，THD+N=10%) －3.2W (VDD=5.0V, RL =4Ω，THD+N=10%) HAA20

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A09T http://www.osen.net.cn 30V N-CHANNEL MOSFET  Features：  Fast switching speed  High input impedance and low level drive  Improved dv/dt c

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LTK5208 V1.3 LTK5208 27.9W F、   LTK5208 3Ω-7.9W、 F 。LTK5208 ， 7V。 LTK5208 ， D 、AB 、， IO ，， EN MODE , ，LTK5208 AB EMI 。 D 90%， D ，L

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