HA-P Datasheet | Specifications & PDF Download

3.7A, 20V N 　N 　N-Channel Enhancement Mode Field Effect Transistor SMD 　　Features 　■20V, 3.7A, RDS(ON)=50mΩ @ VGS=4.5V 　■High dense cell design fo

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Product Folder Order Now Technical Documents Tools & Software Support & Community BQ24725A SLUSAL0C – SEPTEMBER 2011 – REVISED JANUARY 2020 BQ247

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CHIPSET-IC.COM N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 20mΩ ID 12A G UIS,

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LED constant current control chip RM9003B General Description ： RM9003B is a one_stage LED constant current driving control chip which Compatible wit

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD13009 DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collect

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MS23P01S P-Channel Enhancement Mode Power MOSFET Description The MS23P01S uses advanced trench technology to provide excellent RDS(ON), low gate char

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100A 【】 BTA100 Series Specially Varieties 4Q-Triacs 　：NPNPN，，； 　：；、；、。 　：、、、、、、；。 Part Number BTA100-600B BTA100-800B BTA100-1000B BTA100-1200B B

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IP5328P Fully-Integrated Bi-directional PD3.0 and Fast Charge Power Bank SOC with Multiple Input and Output Ports Features  Support multiple ports

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFZ44N FEATURES ·Drain Current –ID=49A@ TC=25℃ ·Drain Source Volta

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MotionKing (China) Motor Industry Co., Ltd. HB Stepper Motor Catalog 2 Phase Hybrid Stepper Motor 17HS series-Size 42mm(1.8 degree) Wiring Diagram:

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RM3401 P-Channel Enhancement Mode Power MOSFET Description The RM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge

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A09T http://www.osen.net.cn 30V N-CHANNEL MOSFET  Features：  Fast switching speed  High input impedance and low level drive  Improved dv/dt c

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HM2301B P-Channel Enhancement Mode Power MOSFET Description The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge

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ABF22 THRU ABF210 Technical Data Data Sheet N1841, Rev. A ABF22 THRU ABF 210 SINGLE PHASE 2.0AMP SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER ABF

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HY4008W/A N-Channel Enhancement Mode MOSFET Features • 80V/200A RDS(ON) = 2.9 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le

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HAA9809 ,4 ,AB /D ,5.4W HAA9809，、AB/D  AB、D ，4Ω5.4W  4 。  ，Charge_pump6.6V HAA9809，  D： ，， －5.4W (VDD=4.5V, RL =4Ω，NCN OFF THD+N=10%

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Preliminary www.DataSheet4U.com TSM4886 30V N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 30 10 @ VGS = 10V 13.5 @ VGS = 4.5V SOP-8 Pin De

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Handbook for the Palm V™ Organizer Copyright Copyright © 1998-1999 3Com Corporation or its subsidiaries. All rights reserved. 3Com, the 3Com logo, Gr

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2Pai Semi Enhanced ESD, 3.0 kV rms/6.0 kV rms 150Kbps Dual-Channel Digital Isolators Data Sheet FEATURES Ultra low power consumption (150Kbps): 0.

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2Pai Semi Enhanced ESD, 3.0 kV rms/6.0 kV rms 150Kbps Dual-Channel Digital Isolators Data Sheet FEATURES Ultra low power consumption (150Kbps): 0.

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