HF-102 Datasheet | Specifications & PDF Download

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPF102/D JFET VHF Amplifier N–Channel — Depletion 1 DRAIN 3 GATE MPF102 2 SOURCE MA

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www.DataSheet4U.com JQX-102F MINIATURE HIGH POWER RELAY File No.:E134517 Features * 4.5KV dielectric coil to contact * Heavy load up to 5000VA Fi

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BB102M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-587 (Z) 1st. Edition November 1997 Features • Build in Biasing Circuit; To reduce

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T CT DUC Semiconductor PRO PRODU E T E E L T O U OBS UBSTIT A1109 S F H E , SIBL FA1100 POS H HFA1102 January 1999 File Number 3597.4 600MHz Current

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Chip Silicon Rectifier HFM101-M THRU HFM107-M Ultra fast recovery type Formosa MS SOD-123 0.161(4.1) 0.146(3.7) 0.012(0.3) Typ. Features Plastic pa

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MPF102 Preferred Devices JFET VHF Amplifier N−Channel − Depletion Features • Pb−Free Package is Available* MAXIMUM RATINGS Rating Drain −Source Volt

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www.vishay.com MMU 0102 HF, MMA 0204 HF, MMB 0207 HF Vishay Beyschlag High Frequency Thin Film MELF Resistors MMU 0102 HF, MMA 0204 HF, and MMB 020

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MICROCOMPUTER MN102H MN102H60G/60K/F60G/F60K LSI User’s Manual Pub.No.22360-014E PanaXSeries is a trademark of Matsushita Electric Industrial Co.,

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R SCHOTTKY BARRIER DIODE HBR10200 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 10（2×5）A 200 V 175 ℃ 0.75V （@Tj=125℃） z z APPLICATI

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HFMAF101 thru HFMAF109 Surface Mount Glass Passivated High Efficiency Rectifiers Reverse Voltage 50 to 1200V Forward Current 1.0A FEATURES * Plast

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MN102H73 Series Type Internal ROM type ROM (byte) RAM (byte) Package (Lead-free) Minimum Instruction Execution Time MN102H730FGT MN102H73G MN102H7

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MICRF102 Micrel MICRF102 QwikRadio™ UHF ASK Transmitter General Description The MICRF102 is a single chip Transmitter IC for remote wireless applica

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MICROCOMPUTER MN102H MN102H75K/F75K/85K/F85K LSI User’s Manual Pub.No.22385-011E PanaXSeries is a trademark of Matsushita Electric Industrial Co.,

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UHF HYPERABRUPT TUNING DIODES • Application frequencies up to 800 MHz • Linear tuning capability between 3 and 8 volts • Diode capacitance ranges from

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BB102C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-588 (Z) 1st. Edition November 1997 Features • Build in Biasing Circuit; To reduce

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Plate Type and Finger Terminal Type High Voltage RF Power Capacitors Class 1 Ceramic Plate Type Finger Terminal Type QUICK REFERENCE DATA DESCRIPTIO

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MICROCOMPUTER MN102H MN102H74G/74F/74D/F74G LSI User’s Manual Pub.No.22374-014E PanaX Series is a trademark of Matsushita Electric Industrial Co.,

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