HI-IP3 Datasheet | Specifications & PDF Download

Translated from Chinese (Simplified) to English - www.onlinedoctranslator.com IP3005 Ultra-high precision built-inMOSFETSingle lithium battery prote

(35 views)

TIP31, TIP32 High Power Bipolar Transistors Features: • Collector - emitter sustaining voltage - VCEO (sus) = 60 V (Minimum) - TIP31A, TIP32A = 100 V

(15 views)

Complementary Silicon High-Power Transistors TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) Designed for general−purpose power amplifier

(15 views)

Data Sheet FEATURES Broadband upconverter/downconverter Power conversion gain of 1.8 dB Broadband RF, LO, and IF ports SSB noise figure (NF) of 9.75 d

(12 views)

® TIP35C TIP36B/TIP36C COMPLEMENTARY SILICON HIGH POWER TRANSISTORS s STMicroelectronic PREFERRED SALESTYPES DESCRIPTION The TIP35C is a silicon E

(10 views)

TIP31/TIP31A/TIP31B/TIP31C — NPN Epitaxial Silicon Transistor TIP31/TIP31A/TIP31B/TIP31C NPN Epitaxial Silicon Transistor Features • Complementary to

(10 views)

High IP3 Monolithic Amplifier Broadband, Maximum Ratings Heat Slug Temperature Storage Temperature DC Voltage DC Power 110°C -40°C to +125°C +1

(10 views)

TIP31, TIP32 High Power Bipolar Transistors Features: • Collector - emitter sustaining voltage - VCEO (sus) = 60 V (Minimum) - TIP31A, TIP32A = 100 V

(10 views)

HMC377QS16G / 377QS16GE v02.0207 CELLULAR HIGH IP3 RFIC DOWNCONVERTER, 0.8 - 1.0 GHz Typical Applications Features The HMC377QS16G / HMC377QS16GE

(10 views)

Data Sheet FEATURES Power conversion gain of 1.6 dB Wideband RF, LO, and IF ports SSB noise figure of 11 dB Input IP3 of 28 dBm Input P1dB of 12 dBm T

(9 views)

HMC639ST89 / 639ST89E v03.0810 HIGH IP3, LOW NOISE AMPLIFIER, 0.2 - 4.0 GHz Typical Applications The HMC639ST89(E) is ideal for: • Cellular / PCS /

(9 views)

HMC410AMS8G / 410AMS8GE v00.0410 GaAs MMIC DOUBLE-BALANCED HIGH IP3 MIXER, 9 - 15 GHz 10 Typical Applications The HMC410AMS8G(E) is ideal for: • L

(9 views)

HMC485MS8G / 485MS8GE v03.0507 HIGH IP3 GaAs MMIC MIXER with INTEGRATED LO AMPLIFIER, 1.7 - 2.4 GHz Typical Applications Features High Dynamic R

(9 views)

IP3103 、 1  ：  VOV:3.5V~4.6V(Step：5mV) VOV ：±15mV  VOVR:3.1V~4.6Vnote1 VOVR ：±50mV  VUV:2V~3V(Step：10mV) VUV ：±50mV  VUVR:2V~3.4Vnote2

(9 views)

IP3265 4~5 / 1  ：  VOVN(N = 1~ 5)：3.55V ~ 4.60V 10mV，±25mV  VOVRN(N = 1 ~ 5)：3.30V ~ 4.60V ±25mV  VUVN(N= 1 ~ 5)：2.00V ~ 3.20V 10mV，±50mV 

(9 views)

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company HIGH POWER TRANSISTORS TIP33, A, B, C NPN TIP34, A, B, C P

(8 views)

FEATURES High-performance active mixer Broadband operation to 2.5 GHz Conversion gain: 7 dB Input IP3: 16.5 dBm LO drive: –10 dBm Noise figure: 14 dB

(8 views)

TIP30 Series(TIP30/30A/30B/30C) TIP30 Series(TIP30/30A/30B/30C) Medium Power Linear Switching Applications • Complementary to TIP29/29A/29B/29C 1 T

(8 views)

TIP31/TIP31A/TIP31B/TIP31C — NPN Epitaxial Silicon Transistor TIP31/TIP31A/TIP31B/TIP31C NPN Epitaxial Silicon Transistor Features • Complementary to

(8 views)

TIP32 Series(TIP32/32A/32B/32C) TIP32 Series(TIP32/32A/32B/32C) Medium Power Linear Switching Applications • Complement to TIP31/31A/31B/31C 1 TO-2

(8 views)