HM2310 Datasheet | Specifications & PDF Download

HM2310-VB HM2310-VB Datasheet N-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.075 at VGS = 10 V 60 0.086 at VGS

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N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM2310DR uses advanced trench technology to provide excellent RDS(ON), low gate charge and ope

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HM & N Channel Enhancement Mode MOSFET DESCRIPTION The HM2310C is the N-Channel logic enhancement mode power field effect transistor is produced

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HM2310 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM2310 uses advanced trench technology to provide excellent RDS(ON), low gate charge a

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M Description The HM2310PR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2

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HM2310B N Channel Enhancement Mode MOSFET DESCRIPTION The HM2310B is the N-Channel logic enhancement mode power field effect transistor is produced

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