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PD-95871 IRHMS57264SE RADIATION HARDENED JANSR2N7477T1 POWER MOSFET 250V, N-CHANNEL THRU-HOLE (Low-Ohmic TO-254AA) Product Summary REF: MIL-PRF

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IRHMS9A97064 (JANSR2N7664T1) Radiation Hardened Power MOSFET Thru-Hole (TO-254AA Low Ohmic) -60V, -45A, P-channel, R9 Superjunction Technology PD-979

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General Description This Power MOSFET is producFeeadtuurseisng H&M Semi’s Advanced Super-Junction This advanced technology theacsh--nb7Lo.oe6wlAeo,

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HI-SINCERITY MICROELECTRONICS CORP. HMSZ5223B thru HMSZ5257B ZENER DIODES Spec. No. : HSL200102 Issued Date : 2001.11.01 Revised Date : 2004.10.27 Pa

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www.DataSheet4U.com ABOV SEMICONDUCTOR 8-BIT SINGLE-CHIP MICROCONTROLLERS HMS81C1808B/16B HMS81C1708B/16B HMS81C1608B/16B HMS81C1508B/16B HMS81C1404

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PD - 94765 IRHMS57260SE RADIATION HARDENED JANSR2N7476T1 POWER MOSFET 200V, N-CHANNEL THRU-HOLE (Low-Ohmic TO-254AA) Product Summary REF: MIL-P

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RADIATION HARDENED POWER MOSFET THRU-HOLE (Low Ohmic - TO-254AA) PD-94713E IRHMS597064 JANSR2N7524T1 60V, P-CHANNEL REF: MIL-PRF-19500/733 R5 TECHNOL

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IRHMS9A97260 (JANSR2N7666T1) PD-97991 Radiation Hardened Power MOSFET Thru-Hole (TO-254AA Low Ohmic) -200V, -45A, P-channel, R9 Superjunction Techno

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IRHMS9A7264 Radiation Hardened Power MOSFET Thru-Hole (TO-254AA Low Ohmic) 250V, 45A, N-channel, R9 Superjunction Technology PD-97959B Features  Si

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HMS30C7202 Highly-integrated MPU (ARM Based 32-Bit Microprocessor) Datasheet Version 1.9 ABOV Semiconductor Ltd. HMS30C7202 HMS30C7202 © 2006 ABOV S

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Discontinued in March 2019 FTR-K1 SERIES POWER RELAY 1 POLE - 1/3/5/10A Medium Load Control LZ Series  FEATURES  UL, CSA, SEV recognized  Contac

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Discontinued in March 2019 FTR-K1 SERIES POWER RELAY 1 POLE - 1/3/5/10A Medium Load Control LZ Series  FEATURES  UL, CSA, SEV recognized  Contac

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HMS20N25D N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is uniquely optimized to pro

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HMS130N20, HMS130N20D N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is uniquely opti

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HMS130N20, HMS130N20D N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is uniquely opti

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HMS4454 N-Channel Super Trench Power MOSFET Description The HMS4454 uses Super Trench technology that is uniquely optimized to provide the most effic

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HMS20N80T HMS20N80T 800V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excellent stability

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HMS4030 N-Channel Super Trench Power MOSFET Description The HMS4030 uses Super Trench technology that is uniquely optimized to provide the most effic

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HMSF30N90T HMSF30N90T 900V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excellent stabili

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HMS120N10, HMS120N10D N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is uniquely opti

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