HS-160 Datasheet | Specifications & PDF Download

SPECIFICATION FOR APPROVAL CUSTOMER: CUSTOMER NO. : JXD PART NO. : B1601S DESCRIPTION: 10/100 BASE-T MAGNETICS MODULES ATTACHMENT: ■ SPECIFICA

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POWERTIP TECH. CORP. DISPLAY DEVICES FOR BETTER ELECTRONIC DESIGN Specification For Approval Customer : Model Type : Sample Code : Mass Produc

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® A Leading Supplier of Magnetic Components 10/100 BASE MODULES 10/100BASE TRANSFORMER Part NO HST-1601DHR Features： ● Designed to meet IEEE 802.3

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600 V, 1.0 A Ultrafast Rectifier MURHS160T3, NRVUHS160V, SURHS8160 Features and Benefits • Ultrafast 35 Nanosecond Recovery Times • 175°C Operating J

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POWERTIP TECH. CORP. DISPLAY DEVICES FOR BETTER ELECTRONIC DESIGN Specification For Approval Customer : Model Type : LCD Module Sample Code : P

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DataSheet.in Freescale Semiconductor Technical Data Document Number: MRF8P2160H Rev. 1, 7/2010 RF Power Field Effect Transistors N--Channel Enhanc

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HYBRID STEPPING MOTORS 0.9˚ 2-PHASE 1.8˚ 3.6˚ 23HS SERIES 1.8° Key Features I High Torque I High Accuracy I Smooth Movement General Specifications

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A Lead Supplier of Magnetic Components 10/100BASE MODUES 10/100BASE TRANSFORMER Features ● ● Designed to meet IEEE 802.3 requirements. Primary indu

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MOONS’ Technology ML23HS / PL23HS Series: 1.8° - Size 23 • Phases 2 • Steps / Revolution 200 • Step Accuracy ±5% • Shaft Load (20,000

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Spec Sheet Multilayer Chip Bead Inductors for Power Lines (BK series P type) BKP1608HS121-T Features Item Summary 120Ω, 2.7 A, 0603/1608 (EIA/JIS) Lif

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600 V, 1.0 A Ultrafast Rectifier MURHS160T3, NRVUHS160V, SURHS8160 Features and Benefits • Ultrafast 35 Nanosecond Recovery Times • 175°C Operating J

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Freescale Semiconductor Technical Data Document Number: MRF8P20160H www.DataSheet4U.com Rev. 0, 4/2010 RF Power Field Effect Transistor N-Channel En

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HYBRID STEPPING MOTORS 0.9˚ 2-PHASE 1.8˚ 3.6˚ 23HS SERIES 1.8° Key Features I High Torque I High Accuracy I Smooth Movement General Specifications

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® A Leading Supplier of Magnetic Components 101/01/0100B0ABSAESEMOMDOUDLUELSES 10/100BASE TRANSFORMER Features： ● Designed to meet IEEE 802.3 requi

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Freescale Semiconductor Technical Data Document Number: MRF8P23160WH Rev. 0, 12/2011 RF Power Field Effect Transistors N--Channel Enhancement--Mode

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Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA, GSM and

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TQM616025 Data Sheet WCDMA / HSUPA Band V/VI Tritium III PA Duplexer Module™ Features  RFIN Match Functional Block Diagram   ANT Power Detector

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HYBRID STEPPING MOTORS 0.9˚ 2-PHASE 1.8˚ 3.6˚ 23HS SERIES 1.8° Key Features I High Torque I High Accuracy I Smooth Movement General Specifications

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