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Silicon N-Channel Power MOSFET ○R CS150N03 A8 General Description： CS150N03 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced tr

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ഀ‫ݾ‬Ԩা CD7388CZ 4u41W ୺к࿛ູٟ৑ׂӖԨা 1ǃὖ ᴀ᭭⫼ೈ˖CD7388CZ CD7388 ᰃϔഫ⫼Ѣッ≑䷇ડⱘಯ BTL ߎⱘ AB ㉏ࡳ⥛ᬒ໻⬉DŽ ݊⡍⚍བϟ˖ Ɣ ࡳ⥛ߎ࡯˄᳔໻ 4u41W/4ȍ˗4u25W/4ȍ @ 14.4Vˈ1kHzˈ10%˅ Ɣ ༅

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Silicon N-Channel Power MOSFET CS630 A4H ○R General Description： CS630 A4H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligne

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Silicon N-Channel Power MOSFET ○R CS150N04 A8 General Description： CS150N04 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high d

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Silicon N-Channel Power MOSFET CS50N20 ANH ○R General Description： CS50N20 ANH, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-

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Silicon N-Channel Power MOSFET CS1N80 A1H ○R General Description： CS1N80 A1H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig

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10W 1. CV203CZ 10W 1.6 2. 2.1 ZIP5 CV203CZ B 3.5A 2.2 1 2 3 IN NF GND 4 OUT 5 VCC 14 0510 5807123-5542 14 0510 5803016 3. 3.1 DC 3.3 Tam

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3DD13012 AN NPN ， ， ， ， 、 。 NPN 3DD13012 AN ○R ● ● ● ● ● ● ● ● VCEO IC Ptot（TC=25℃） 400 15 120 V A W TO-3P(N) -

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Silicon N-Channel Power MOSFET CS100N03 B4 ○R General Description： CS100N03 B4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

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N 2CZ10150 A9 ○R 2CZ10150 A9 ， 。 、 、。 ●150℃ ● ● ● ● VRRM IF（AV） VF（MAX） 150 2×5 0.90 V A V -10℃～40℃ 1 ＜85％ 265℃ （Per Di

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R ○ 2H1002 A4 2H1002 A4 CCD（Constant Current Device） LED ， ， ，。 VB Ptot （Ta=25℃） 120 1.2 V W ● ● ESD(HBM )>8KV ● T5/T8 LED ● LED ●

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Silicon N-Channel Power MOSFET CS830 A4RD ○R General Description： CS830 A4RD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig

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Silicon FS Trench IGBT ○R BT40T60 ANFU General Description： VCES 600 V Using HUAJING's proprietary trench design and advanced Field Stop (FS) I

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2CZ20100 A8S ， 。 、 、。 N 2CZ20100 A9S ○R ●150℃ ● ● ● ● VRRM IF（AV） VF（MAX） 100 2×10 0.85 V A V -10℃～40℃ 1 ＜85％ 265℃ （Per

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Silicon N-Channel Power MOSFET ○R CS150N03 A8 General Description： CS150N03 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high d

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Silicon FS Planar IGBT BT15T120ANF ○R General Description： Using HUAJING's proprietary trench design and advanced FS(field stop) technology, the 120

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Silicon N-Channel Power MOSFET CS13J65 A0-G ○R General Description： CS13J65 A0-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super j

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NPN 3DG3020 A1-HK ○R 3DG3020 A1-HK NPN ， ， ， 、。 ● ● ● ● ● ● ● ● -10℃～40℃ 1 265℃ ＜85％ VCEO IC Ptot （Ta=25℃） 450 1.5 0

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CD7666GP 1. CD7667/66GP 5dB 5dB 3dB 3dB 5 2 VCC = 6 ~ 12V ICCQ = 4mA VCC=9V 2. 2.1 DIP16 16 15 14 13 12 11 10 _ A2 + Vcc +_C5 +_C4 +_ C3 +_

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