HY1403 Datasheet | Specifications & PDF Download

HY1403D/U/S N-Channel Enhancement Mode MOSFET Features • 30V/42A, RDS(ON)= 10 mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Ex

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HY1403D/U/S N-Channel Enhancement Mode MOSFET Features • 30V/42A, RDS(ON)= 10 mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Ex

(29 views)

HY1403D/U/S N-Channel Enhancement Mode MOSFET Features • 30V/42A, RDS(ON)= 10 mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Ex

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HY1403P Features z 30V/44A RDS(ON)=9.6mΩ(typ.) @VGS = 10V z 100% avalanche tested z Excellent CdV/dt effect decline z /HDG)UHH Device Available App

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HY1403D/U/S N-Channel Enhancement Mode MOSFET Features • 30V/42A, RDS(ON)= 10 mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Ex

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HY1403D/U/V N-Channel Enhancement Mode MOSFET Features z 30V/42A RDS(ON) = 10 mΩ(typ.) @VGS =- 10V RDS(ON) = 14 mΩ(typ.) @VGS = -4.5V z 100% Avalanc

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