High-IP3 Datasheet | Specifications & PDF Download

Translated from Chinese (Simplified) to English - www.onlinedoctranslator.com IP3005 Ultra-high precision built-inMOSFETSingle lithium battery prote

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Data Sheet FEATURES Power conversion gain of 1.6 dB Wideband RF, LO, and IF ports SSB noise figure of 11 dB Input IP3 of 28 dBm Input P1dB of 12 dBm T

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v01.0301 MICROWAVE CORPORATION HMC350MS8 GaAs MMIC HIGH IP3 SINGLEBALANCED MIXER, 0.6 - 1.2 GHz Features Conversion Loss: 8.0 dB Input IP3: +27 dBm I

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HMC421QS16 / 421QS16E v04.0810 PCS/UMTS HIGH IP3 RFIC DOWNCONVERTER, 1.4 - 2.3 GHz MIXERS - DOWNCONVERTERS - SMT 9 9-1 Typical Applications Feat

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Data Sheet FEATURES Broadband upconverter/downconverter Power conversion gain of 1.8 dB Broadband RF, LO, and IF ports SSB noise figure (NF) of 9.75 d

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company HIGH POWER TRANSISTORS TIP33, A, B, C NPN TIP34, A, B, C P

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PRELIMINARY DATA SHEET ECG003 BROADBAND HIGH OIP3 AMPLIFIER DC - 3000 MHz Features „ DC to 3000 MHz „ 39 dBm Typical OIP3 at 900 MHz „ 36 dBm Typi

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Complementary Silicon High-Power Transistors TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) Designed for general−purpose power amplifier

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High IP3 Monolithic Amplifier Broadband, Maximum Ratings Heat Slug Temperature Storage Temperature DC Voltage DC Power 110°C -40°C to +125°C +1

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Complementary Silicon High-Power Transistors TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) Designed for general−purpose power amplifier

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Application Note No. 081 Discrete Semiconductors The BGA619 Silicon-Germanium High IP3 Low Noise Amplifier in PCS Receiver Applications Features • Ea

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High IP3 Monolithic Amplifier Broadband, Maximum Ratings Heat Slug Temperature Storage Temperature DC Voltage DC Power 110°C -40°C to +125°C +1

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TIP31, TIP32 High Power Bipolar Transistors Features: • Collector - emitter sustaining voltage - VCEO (sus) = 60 V (Minimum) - TIP31A, TIP32A = 100 V

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TIP31, TIP32 High Power Bipolar Transistors Features: • Collector - emitter sustaining voltage - VCEO (sus) = 60 V (Minimum) - TIP31A, TIP32A = 100 V

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TIP31, TIP32 High Power Bipolar Transistors Features: • Collector - emitter sustaining voltage - VCEO (sus) = 60 V (Minimum) - TIP31A, TIP32A = 100 V

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FEATURES High-performance active mixer Broadband operation to 2.5 GHz Conversion gain: 7 dB Input IP3: 16.5 dBm LO drive: –10 dBm Noise figure: 14 dB

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High IP3 Monolithic Amplifier Broadband, Maximum Ratings Heat Slug Temperature Storage Temperature DC Voltage DC Power 110°C -40°C to +125°C +1

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