High-IP3 Datasheet | Specifications & PDF Download

Translated from Chinese (Simplified) to English - www.onlinedoctranslator.com IP3005 Ultra-high precision built-inMOSFETSingle lithium battery prote

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Complementary Silicon High-Power Transistors TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) Designed for general−purpose power amplifier

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TIP31, TIP32 High Power Bipolar Transistors Features: • Collector - emitter sustaining voltage - VCEO (sus) = 60 V (Minimum) - TIP31A, TIP32A = 100 V

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Data Sheet FEATURES Broadband upconverter/downconverter Power conversion gain of 1.8 dB Broadband RF, LO, and IF ports SSB noise figure (NF) of 9.75 d

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® TIP35C TIP36B/TIP36C COMPLEMENTARY SILICON HIGH POWER TRANSISTORS s STMicroelectronic PREFERRED SALESTYPES DESCRIPTION The TIP35C is a silicon E

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TIP31, TIP32 High Power Bipolar Transistors Features: • Collector - emitter sustaining voltage - VCEO (sus) = 60 V (Minimum) - TIP31A, TIP32A = 100 V

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HMC377QS16G / 377QS16GE v02.0207 CELLULAR HIGH IP3 RFIC DOWNCONVERTER, 0.8 - 1.0 GHz Typical Applications Features The HMC377QS16G / HMC377QS16GE

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HMC485MS8G / 485MS8GE v03.0507 HIGH IP3 GaAs MMIC MIXER with INTEGRATED LO AMPLIFIER, 1.7 - 2.4 GHz Typical Applications Features High Dynamic R

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FEATURES High-performance active mixer Broadband operation to 2.5 GHz Conversion gain: 7 dB Input IP3: 16.5 dBm LO drive: –10 dBm Noise figure: 14 dB

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Data Sheet FEATURES Power conversion gain of 1.6 dB Wideband RF, LO, and IF ports SSB noise figure of 11 dB Input IP3 of 28 dBm Input P1dB of 12 dBm T

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HMC639ST89 / 639ST89E v03.0810 HIGH IP3, LOW NOISE AMPLIFIER, 0.2 - 4.0 GHz Typical Applications The HMC639ST89(E) is ideal for: • Cellular / PCS /

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HMC410AMS8G / 410AMS8GE v00.0410 GaAs MMIC DOUBLE-BALANCED HIGH IP3 MIXER, 9 - 15 GHz 10 Typical Applications The HMC410AMS8G(E) is ideal for: • L

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High IP3 Monolithic Amplifier Broadband, Maximum Ratings Heat Slug Temperature Storage Temperature DC Voltage DC Power 110°C -40°C to +125°C +1

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HMC381LP6 / 381LP6E v04.1007 HIGH IP3 RFIC DUAL DOWNCONVERTER, 1.7 - 2.7 GHz MIXERS - DOWNCONVERTERS - SMT 8 8 - 70 Typical Applications Feature

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19-1786; Rev 1; 11/03 KIT ATION EVALU E L B A AVAIL 2.4GHz SiGe, High IP3 Low-Noise Amplifier General Description Features o Low Noise Figure (2.0dB

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Complementary Silicon High-Power Transistors TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) Designed for general−purpose power amplifier

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High IP3 Monolithic Amplifier Broadband, Maximum Ratings Heat Slug Temperature Storage Temperature DC Voltage DC Power 110°C -40°C to +125°C +1

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TIP33A, TIP34A TIP33B, TIP34B TIP33C, TIP34C Silicon Complementary High−Power Transistors TO247 Type Package Description: The TIP33 (NPN) and TIP34 (

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CMD258C4 7.5-13 GHz High IP3 I/Q Mixer Features ► Low conversion loss ► High IP3 ► Image rejection: 29 dB ► Wide IF bandwidth ► Pb-free RoHs complian

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