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PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 2 – APRIL 94 FEATURES * 40 Volt VCEO * Gain of 200 at IC=1 Amps * Very low saturation volta

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MCM Linear High Gain Linearity Mo d u l e Product Features GLM0921-L / GLM1521-L / GBM1821-L GLM2121-L / GLM2521-L Applications • Repeater • RF Sub-S

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ZXTP25020DZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -20V BVECO > -4V IC(cont) = 5A VCE(sat) < -65mV @ -1A RCE(sat) = 39m⍀ PD = 2.4W Com

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LM2469 Monolothic Triple 9nS High Gain CRT Driver October 2000 LM2469 Monolothic Triple 9nS High Gain CRT Driver General Description The LM2469 is a

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ZXTP25012EZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -12V hFE > 500 IC(cont) = 4.5A VCE(sat) < -70mV @ 1A RCE(sat) = 45m⍀ PD = 2.4W Comp

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CA741, CA741C, CA1458, CA1558, LM741, LM741C, LM1458 Data Sheet September 1998 File Number 531.4 0.9MHz Single and Dual, High Gain Operational Amplifi

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BC 817-16W NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation vol

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MCM Linear High Gain Linearity Mo d u l e Product Features GLM0921-L / GLM1521-L / GBM1821-L GLM2121-L / GLM2521-L Applications • Repeater • RF Sub-S

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High Gain Darlington Output Optocouplers Technical Data 4N45 4N46 Features • High Current Transfer Ratio–1500% Typical • Low Input Current Requirem

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NPN Silicon AF Transistor BC 846 W BC 850 W Features q q q q q For AF input stages and driver applications High current gain Low collector-emit

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NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 – FEBRUARY 1995 FEATURES * VCEV=50V * Very Low Saturation Voltages * High Gain * 20 Amps

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NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 - NOVEMBER 1995 FEATURES * 180 Volt VCEO * Gain of 500 at IC=100mA * Very low saturation

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www.DataSheet4U.com 2STX2220 High Gain Low Voltage PNP Power Transistor General features ■ ■ ■ ■ Very low Collector to Emitter saturation voltage D.

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ZXTN25012EZ 12V NPN high gain transistor in SOT89 Summary BVCEO > 12V BVECX > 6V www.DataSheet4U.com hFE > 500 IC(cont) = 6.5A VCE(sat) < 38mV @ 1A RC

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Features  BVCEX > 180V  BVCEO > 100V  BVECO > 6V  IC = 3A High Continuous Current  Low Saturation Voltage VCE(sat) < 100mV @ 1A  RCE(sat) = 85mΩ

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Features • BVCEO > 45V • IC = 3A High Continuous Collector Current • ICM = 6A Peak Collector Current • High gain device >400 @1A • RCE(sat) = 77mΩ for

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CA741, CA741C, CA1458, CA1558, LM741, LM741C, LM1458 Data Sheet September 1998 File Number 531.4 0.9MHz Single and Dual, High Gain Operational Amplifi

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High Common-Mode Voltage, Programmable Gain Difference Amplifier AD628 02992-001 FEATURES High common-mode input voltage range ±120 V at VS = ±15 V

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KSD1944 KSD1944 High Gain Power Transistor 1 TO-220F 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25

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VCA810 SBOS275C − JUNE 2003 − REVISED OCTOBER 2004 High Gain Adjust Range, Wideband, Voltage-Controlled Amplifier FEATURES D D D D D D D D D HIGH GAI

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