I630 Datasheet | Specifications & PDF Download

INTEGRATED CIRCUITS DIVISION Features • 30A Peak Source/Sink Drive Current • High Operating Voltage Capability: 35V • -40°C to +125°C Extended Operati

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Previous Datasheet Index Next Data Sheet PD - 9.1236 IRLI630G HEXFET® Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead

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$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extende

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IRFW630B / IRFI630B IRFW630B / IRFI630B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are

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IRFW630B / IRFI630B IRFW630B / IRFI630B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are

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IRFW630B / IRFI630B IRFW630B / IRFI630B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are

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630/F630/I630/E630/B630/D630 9A 200V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs, is obtained by the sel

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VTI630 Rev.D Mar.-2016 DATA SHEET / Descriptions TO-220 N MOS 。N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features RDS(on) 0.3Ω,，。 Typica

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www.vishay.com IRLI630G Vishay Siliconix Power MOSFET D TO-220 FULLPAK G S GD S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 200 VGS

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www.vishay.com IRFI630G Vishay Siliconix Power MOSFET D TO-220 FULLPAK G S GD S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (

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$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extende

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VTI630F Rev.D Nov.-2015 DATA SHEET / Descriptions TO-220F N MOS 。N-CHANNEL MOSFET in a TO-220F Plastic Package. / Features RDS(on) 0.3Ω,，。 Typ

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BRI630 Rev.D Nov.-2015 DATA SHEET / Descriptions TO-251 N MOS 。N-CHANNEL MOSFET in a TO-251 Plastic Package. / Features ,,。 Low gate charge, l

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IRFI630G, SiHFI630G Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 43 7.

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