IP3 Datasheet | Specifications & PDF Download

SEMICONDUCTOR TIP31 (NPN) Series TIP32 (PNP) Series RRooHHSS Nell High Power Products Complementary Silicon Power Transistor 3A/40~100V/40W FEATURES

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Translated from Chinese (Simplified) to English - www.onlinedoctranslator.com IP3005 Ultra-high precision built-inMOSFETSingle lithium battery prote

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MIP3E50MY MOS (IPD) ■ • (MIP2ExD • • ■ • ■ 50% ) VD 700 VC 8 ID 1.98 IDP 3.1 IC 0.1 Tch 150 Tstg −55 ∼ +150 V V A A A °C °C ■ Control ■ • TO-2

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isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltag

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TIP35C TIP36C Complementary power transistors Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package www.datasheet4u.com ·Complement to type

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DReovcisNioon. . T2 D4-EA-01169 MIP3E70MY Established : 2004-06-11 Revised : 2015-04-01 Page 1 of 6 DReovcisNioon. . T2 D4-EA-01169 MIP3E70MY Es

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isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC = 4A ·Collector-Emitter Saturation Volta

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SEMICONDUCTOR TIP35 (NPN) Series TIP36 (PNP) Series RRooHHSS Nell High Power Products Complementary Silicon Power Transistor 25A/40~100V/125W 15.6±0

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TIP35, TIP35A, TIP35B, TIP35C NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the TIP36 Series ● 125 W at 25°C Case Temperature ●

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TIP30, TIP30A,TIP30B, TIP30C PNP SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JULY 1968 - REVISED MARCH 1997 q Designed

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TIP36, TIP36A, TIP36B, TIP36C PNP SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JULY 1968 - REVISED MARCH 1997 q Designe

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® TIP35C TIP36B/TIP36C COMPLEMENTARY SILICON HIGH POWER TRANSISTORS s STMicroelectronic PREFERRED SALESTYPES DESCRIPTION The TIP35C is a silicon E

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TIP35 TIP35A TIP35B TIP35C NPN TIP36 TIP36A TIP36B TIP36C PNP COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTIO

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Philips Semiconductors Product specification Logic level TOPFET PIP3119-P DESCRIPTION Monolithic temperature and overload protected logic level po

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TIP Vishay Dale Infrared Touch Panels With Controller FEATURES • Fast response time • Flexible operating modes • User transparent • Rugged constructi

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SKiiP 32 NAB 12 Absolute Maximum Ratings Symbol Inverter VCES VGES IC ICM IF = –IC IFM = –ICM Conditions 1) Values 1200 ± 20 65 / 45 130 / 90 60 / 40

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IP3088CX5; IP3088CX10; IP3088CX15; IP3088CX20 Rev. 01 — 12 February 2010 www.DataSheet4U.com Integrated 2, 4, 6 and 8-channel passive LC-filter netw

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IP3319CX6 Single-channel common-mode filter with integrated ESD protection network Rev. 2 — 29 May 2013 Product data sheet 1. Product profile 1.1

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TIP31, TIP32 High Power Bipolar Transistors Features: • Collector - emitter sustaining voltage - VCEO (sus) = 60 V (Minimum) - TIP31A, TIP32A = 100 V

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