www.DataSheet4U.com IP3002 / I3002 Power Factor C.
INCHANGE
TIP3055 - NPN Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC = 4A ·Collector-Emitter Saturation Volta.
nELL
TIP31C - Complementary Silicon Power Transistor
SEMICONDUCTOR TIP31 (NPN) Series TIP32 (PNP) Series RRooHHSS Nell High Power Products Complementary Silicon Power Transistor 3A/40~100V/40W FEATURES.
Multicomp
TIP35C - Complementary Power Transistors
TIP35C, 36C Complementary Power Transistors Designed for use in general purpose power amplifier and switching applications. Features: • Collector-Emit.
SavantIC
TIP31 - Silicon NPN Power Transistors
Silicon NPN Power Transistors Product Specification TIP31/31A/31B/31C DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= 1.0A ·Collector-Emitter Susta.
SavantIC
TIP36 - SILICON POWER TRANSISTOR
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION With TO-3PN package www.datasheet4u.com ·Complement to type T.
nELL
TIP35C - Complementary Silicon Power Transistor
SEMICONDUCTOR TIP35 (NPN) Series TIP36 (PNP) Series RRooHHSS Nell High Power Products Complementary Silicon Power Transistor 25A/40~100V/125W 15.6±0.
SavantIC
TIP35C - SILICON POWER TRANSISTOR
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package www.datasheet4u.com ·Complement to type .
STMicroelectronics
TIP3055 - Complementary power transistors
TIP2955 TIP3055 Complementary power transistors Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Application.
Panasonic
MIP3E3SMY - Silicon MOS type integrated circuit
MIP3E3SMY MOS (IPD) ■ • (MIP2ExD • • ■ • ■ 50% ) VD 700 VC 8 ID 1.1 IDP 1.7 IC 0.1 Tch 150 Tstg −55 ∼ +150 V V A A A °C °C ■ Control Max. duty.
Semikron
SKIIP31NAB12 - IGBT
www.DataSheet4U.com SKiiP 31 NAB 12 Absolute Maximum Ratings Symbol Inverter VCES VGES IC ICM IF = –IC IFM = –ICM Conditions 1) (Chopper see SKiiP 22.
SavantIC
TIP31C - Silicon NPN Power Transistors
Silicon NPN Power Transistors Product Specification TIP31/31A/31B/31C DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= 1.0A ·Collector-Emitter Susta.
Multicomp
TIP36C - Complementary Power Transistors
TIP35C, 36C Complementary Power Transistors Designed for use in general purpose power amplifier and switching applications. Features: • Collector-Emit.
nELL
TIP35 - Complementary Silicon Power Transistor
SEMICONDUCTOR TIP35 (NPN) Series TIP36 (PNP) Series RRooHHSS Nell High Power Products Complementary Silicon Power Transistor 25A/40~100V/125W 15.6±0.
Panasonic
MIP3E70MY - Silicon MOS type integrated circuit
DReovcisNioon. . T2 D4-EA-01169 MIP3E70MY Established : 2004-06-11 Revised : 2015-04-01 Page 1 of 6 DReovcisNioon. . T2 D4-EA-01169 MIP3E70MY Es.
nELL
TIP31 - Complementary Silicon Power Transistor
SEMICONDUCTOR TIP31 (NPN) Series TIP32 (PNP) Series RRooHHSS Nell High Power Products Complementary Silicon Power Transistor 3A/40~100V/40W FEATURES.
SavantIC
TIP32B - Silicon PNP Power Transistors
SavantIC Semiconductor Silicon PNP Power Transistors Product Specification TIP32/32A/32B/32C DESCRIPTION ·With TO-220C package ·Complement to type T.
INJOINIC
IP3005 - Ultra-high precision built-in MOSFET single-cell lithium battery protection
Translated from Chinese (Simplified) to English - www.onlinedoctranslator.com IP3005 Ultra-high precision built-inMOSFETSingle lithium battery prote.
Panasonic
MIP3E30MP - Silicon MOS type integrated circuit
(IPD) MIP3E30MP MOS ■ • (MIP2ExD • • 50% ) 8 9.4±0.3 Unit : mm +0 0.25 -0.05 .10 7 5 7.62±0.25 3.4±0.3 3.8±0.25 6.3±0.2 ■ • 1 2 3 4 2.54±0.25 ■ .
nELL
TIP32C - Complementary Silicon Power Transistor
SEMICONDUCTOR TIP31 (NPN) Series TIP32 (PNP) Series RRooHHSS Nell High Power Products Complementary Silicon Power Transistor 3A/40~100V/40W FEATURES.
STMicroelectronics
TIP31A - Power transistor
TIP31A Power transistors General features ■ New enhanced series ■ High switching speed ■ hFE improved linearity Applications ■ Linear and switching i.
