IP3 Datasheet | Specifications & PDF Download

SEMICONDUCTOR TIP31 (NPN) Series TIP32 (PNP) Series RRooHHSS Nell High Power Products Complementary Silicon Power Transistor 3A/40~100V/40W FEATURES

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isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC = 4A ·Collector-Emitter Saturation Volta

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TIP35C, 36C Complementary Power Transistors Designed for use in general purpose power amplifier and switching applications. Features: • Collector-Emit

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Silicon NPN Power Transistors Product Specification TIP31/31A/31B/31C DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= 1.0A ·Collector-Emitter Susta

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Translated from Chinese (Simplified) to English - www.onlinedoctranslator.com IP3005 Ultra-high precision built-inMOSFETSingle lithium battery prote

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TIP31, TIP31A, TIP31B, TIP31C NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the TIP32 Series ● 40 W at 25°C Case Temperature ●

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733-11-I Wuxi I-CORE Electronics Co., Ltd. Number: AiP31567-AX-BJ-93EN AiP31567 132 SEG/65 COM Dot Matrix LCD Controller/Driver Product Specificatio

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package www.datasheet4u.com ·Complement to type

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MIP3550MS Silicon MOS FET type integrated circuit  Features  Expanding the range of input / output  High-efficiency and the reduction of coil sound

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IP3265 4~5 / 1  ：  VOVN(N = 1~ 5)：3.55V ~ 4.60V 10mV，±25mV  VOVRN(N = 1 ~ 5)：3.30V ~ 4.60V ±25mV  VUVN(N= 1 ~ 5)：2.00V ~ 3.20V 10mV，±50mV 

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MIP3E3SMY MOS (IPD) ■ • (MIP2ExD • • ■ • ■ 50% ) VD 700 VC 8 ID 1.1 IDP 1.7 IC 0.1 Tch 150 Tstg −55 ∼ +150 V V A A A °C °C ■ Control Max. duty

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www.DataSheet4U.com SKiiP 31 NAB 12 Absolute Maximum Ratings Symbol Inverter VCES VGES IC ICM IF = –IC IFM = –ICM Conditions 1) (Chopper see SKiiP 22

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MIP3550MTSCF Type Application Structure Equivalent Circuit Package Silicon MOSFET type Integrated Circuit For Switching Power Supply Control CMOS

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CYStech Electronics Corp. 3A NPN Epitaxial Planar Power Transistor TIP31CJ3 Spec. No. : C609J3 Issued Date : 2014.06.06 Revised Date : Page No. : 1/6

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IP3254 3 /4 IC 1． IP3254 ， 3 4 / IC。 SEL ， 3 4 。IP3254 。 ， ； MOS 。 2．  *1  VCU： 3.500V ~ 4.100V, step 50mV 4.100V ~ 4.575V, step 25mV ±25mV

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isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltag

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Silicon NPN Power Transistors Product Specification TIP31/31A/31B/31C DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= 1.0A ·Collector-Emitter Susta

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TIP35C, 36C Complementary Power Transistors Designed for use in general purpose power amplifier and switching applications. Features: • Collector-Emit

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SavantIC Semiconductor Silicon PNP Power Transistors Product Specification TIP30/30A/30B/30C DESCRIPTION ·With TO-220C package ·Complement to type T

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TIP2955 TIP3055 Complementary power transistors Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Application

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