IP3 Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC = 4A ·Collector-Emitter Saturation Volta

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SEMICONDUCTOR TIP31 (NPN) Series TIP32 (PNP) Series RRooHHSS Nell High Power Products Complementary Silicon Power Transistor 3A/40~100V/40W FEATURES

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Translated from Chinese (Simplified) to English - www.onlinedoctranslator.com IP3005 Ultra-high precision built-inMOSFETSingle lithium battery prote

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TIP35C, 36C Complementary Power Transistors Designed for use in general purpose power amplifier and switching applications. Features: • Collector-Emit

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Silicon NPN Power Transistors Product Specification TIP31/31A/31B/31C DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= 1.0A ·Collector-Emitter Susta

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Wuxi I-CORE Electronics Co., Ltd. 733-11-I Number:AIP31068L-AX-BJ-153EN AIP31068L 16COM / 40SEG DRIVER & CONTROLLER FOR DOT MATRIX LCD Product Spec

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TIP2955 TIP3055 Complementary power transistors Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Application

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package www.datasheet4u.com ·Complement to type

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AIP3D20A060Q4(N) AIP3P20A060Q4(N) Dual-In-Line Package Intelligent Power Module External View Size: 38 x 24 x 3.6 mm Features  UL Recognized: UL 17

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SavantIC Semiconductor Silicon PNP Power Transistors Product Specification TIP32/32A/32B/32C DESCRIPTION ·With TO-220C package ·Complement to type T

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isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltag

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IP117, IP117A IP317, IP317A LM117, LM117A 1.5 AMP POSITIVE ADJUSTABLE VOLTAGE REGULATOR FOR HI-REL APPLICATIONS FEATURES • Output voltage range of: 1.

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MIP3E3SMY MOS (IPD) ■ • (MIP2ExD • • ■ • ■ 50% ) VD 700 VC 8 ID 1.1 IDP 1.7 IC 0.1 Tch 150 Tstg −55 ∼ +150 V V A A A °C °C ■ Control Max. duty

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TIP35CW TIP36CW Complementary power transistors Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Application

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isc Silicon NPN Power Transistor isc Product Specification TIP3055F DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC = 4A

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AIP3D30A060Q4(N) AIP3P30A060Q4(N) Dual-In-Line Package Intelligent Power Module External View Size: 38 x 24 x 3.6 mm Features  UL Recognized: UL 17

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LAB TOP VIEW COMP 1 V FB 2 I SENSE 3 R T /C T 4 8 7 6 5 SEME IP1842A SERIES IP1843A SERIES VREF VCC OUTPUT GROUND CURRENT MODE REGULATING PULSE WI

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Data Sheet FEATURES Power conversion gain of 1.6 dB Wideband RF, LO, and IF ports SSB noise figure of 11 dB Input IP3 of 28 dBm Input P1dB of 12 dBm T

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TIP32 TIP32A TIP32B TIP32C SILICON PNP POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR TIP32 series dev

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