IRF331 Datasheet | Specifications & PDF Download

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF331 DESCRIPTION ·VGS Rated at ±20V ·Silicon Gate for Fast Switch

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  AUTOMOTIVE GRADE AUIRF3315S Features  Advanced Planar Technology  Low On-Resistance  Dynamic dV/dT Rating  175°C Operating Temperature  Fast

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PD- 95760 IRF3315SPbF IRF3315LPbF • Lead-Free www.DataSheet4U.com www.irf.com 1 08/24/04 IRF3315S/LPbF 2 www.irf.com IRF3315S/LPbF www.irf.co

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Isc N-Channel MOSFET Transistor IRF3315S ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·10

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isc N-Channel MOSFET Transistor IRF3315，IIRF3315 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤70mΩ ·Enhancement mode ·Fast Switching Speed

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Isc N-Channel MOSFET Transistor ·FEATURES ·With To-262 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche test

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PD - 97733 AUTOMOTIVE GRADE Features l l l l l l l Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating HEXFET® Power MOSFET D AUIRF

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PD -91623A APPROVED l l l l l IRF3315 D HEXFET® Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Swit

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PD - 9.1617A PRELIMINARY l l l l l l IRF3315S/L HEXFET® Power MOSFET D Advanced Process Technology Surface Mount (IRF3315S) Low-profile through-hol

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www.DataSheet4U.com PD -91623A APPROVED l l l l l IRF3315 D HEXFET® Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating

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PD - 9.1617A PRELIMINARY l l l l l l IRF3315S/L HEXFET® Power MOSFET D Advanced Process Technology Surface Mount (IRF3315S) Low-profile through-hol

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PD- 95760 IRF3315SPbF IRF3315LPbF • Lead-Free www.DataSheet4U.com www.irf.com 1 08/24/04 IRF3315S/LPbF 2 www.irf.com IRF3315S/LPbF www.irf.co

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