IRF4905 Datasheet | Specifications & PDF Download

Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel G Fully Avalanche

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UMW IRF4905STRL -55V P-Channel MOSFET 1.Description Features of this design are a 150°C junction operating temperature, fast switching speed and impr

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UMW IRF4905 -55V P-Channel MOSFET 1.Description The TO-220 package is universally preferred for all commercial-industrial applications at power dissi

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PD - 9.1478A IRF4905S/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF4905S) l Low-profile through-hole (IRF4905L) l 175°C Opera

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isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤20mΩ(@VGS= -10V; ID= -42A) ·Advanced trench process technology

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isc P-Channel MOSFET Transistor IRF4905,IIRF4905 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.02Ω ·Enhancement mode: ·100% avalanche test

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PD - 97034 IRF4905SPbF IRF4905LPbF Features O Advanced Process Technology O Ultra Low On-Resistance O 150°C Operating Temperature O Fast Switching O

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Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Le

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  AUTOMOTIVE GRADE Features  Advanced Planar Technology  P-Channel MOSFET  Low On-Resistance  150°C Operating Temperature  Fast Switching  Repe

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isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤20mΩ(@VGS= -10V; ID= -38A) ·Advanced trench process technology

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PD - 97034 IRF4905SPbF IRF4905LPbF Features O O O O O O HEXFET® Power MOSFET D O Advanced Process Technology Ultra Low On-Resistance 150°C Operati

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  AUTOMOTIVE GRADE Features  Advanced Planar Technology  P-Channel MOSFET  Low On-Resistance  150°C Operating Temperature  Fast Switching  Repe

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PD - 97034 IRF4905SPbF IRF4905LPbF Features O O O O O O HEXFET® Power MOSFET D O Advanced Process Technology Ultra Low On-Resistance 150°C Operati

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PD - 97034 IRF4905SPbF IRF4905LPbF Features O Advanced Process Technology O Ultra Low On-Resistance O 150°C Operating Temperature O Fast Switching O

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AUTOMOTIVE GRADE PD - 96338 AUIRF4905 HEXFET® Power MOSFET Features l l l l l l l l l Advanced Planar Technology Low On-Resistance Dynamic dV/dT Ra

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  AUTOMOTIVE GRADE Features  Advanced Planar Technology  Low On-Resistance  Dynamic dV/dT Rating  175°C Operating Temperature  Fast Switching 

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AUTOMOTIVE GRADE Features l l l l l l l l Advanced Planar Technology P-Channel MOSFET Low On-Resistance 150°C Operating Temperature Fast Switching R

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AUTOMOTIVE GRADE Features l l l l l l l l Advanced Planar Technology P-Channel MOSFET Low On-Resistance 150°C Operating Temperature Fast Switching R

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