isc P-Channel MOSFET Transistor IRF4905,IIRF4905 .
IRF4905S - Power MOSFET
PD - 97034 IRF4905SPbF IRF4905LPbF Features O Advanced Process Technology O Ultra Low On-Resistance O 150°C Operating Temperature O Fast Switching O .IRF4905 - Power MOSFET
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel G Fully Avalanche.IRF4905 - P-Channel MOSFET Transistor
isc P-Channel MOSFET Transistor IRF4905,IIRF4905 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.02Ω ·Enhancement mode: ·100% avalanche test.IRF4905S - P-Channel MOSFET
isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤20mΩ(@VGS= -10V; ID= -42A) ·Advanced trench process technology .IRF4905L - Power MOSFET
PD - 97034 IRF4905SPbF IRF4905LPbF Features O Advanced Process Technology O Ultra Low On-Resistance O 150°C Operating Temperature O Fast Switching O .AUIRF4905L - Power MOSFET
AUTOMOTIVE GRADE Features Advanced Planar Technology P-Channel MOSFET Low On-Resistance 150°C Operating Temperature Fast Switching Repe.AUIRF4905S - Power MOSFET
AUTOMOTIVE GRADE Features Advanced Planar Technology P-Channel MOSFET Low On-Resistance 150°C Operating Temperature Fast Switching Repe.IRF4905SPBF - HEXFET Power MOSFET
PD - 97034 IRF4905SPbF IRF4905LPbF Features O O O O O O HEXFET® Power MOSFET D O Advanced Process Technology Ultra Low On-Resistance 150°C Operati.F4905S - IRF4905S
PD - 9.1478A IRF4905S/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF4905S) l Low-profile through-hole (IRF4905L) l 175°C Opera.AUIRF4905 - Power MOSFET
AUTOMOTIVE GRADE PD - 96338 AUIRF4905 HEXFET® Power MOSFET Features l l l l l l l l l Advanced Planar Technology Low On-Resistance Dynamic dV/dT Ra.IRF4905PbF - Power MOSFET
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Le.AUIRF4905 - Power MOSFET
AUTOMOTIVE GRADE Features Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching .IRF4905LPBF - HEXFET Power MOSFET
PD - 97034 IRF4905SPbF IRF4905LPbF Features O O O O O O HEXFET® Power MOSFET D O Advanced Process Technology Ultra Low On-Resistance 150°C Operati.AUIRF4905S - Power MOSFET
AUTOMOTIVE GRADE Features l l l l l l l l Advanced Planar Technology P-Channel MOSFET Low On-Resistance 150°C Operating Temperature Fast Switching R.AUIRF4905L - Power MOSFET
AUTOMOTIVE GRADE Features l l l l l l l l Advanced Planar Technology P-Channel MOSFET Low On-Resistance 150°C Operating Temperature Fast Switching R.IRF4905L - P-Channel MOSFET
isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤20mΩ(@VGS= -10V; ID= -38A) ·Advanced trench process technology .